Silicon-Based Heat-Dissipation Device For Heat-Generating Devices

Abstract

Embodiments of a silicon-based heat-dissipation device and an apparatus including a silicon-based heat-dissipation device are described. In one aspect, an apparatus includes a silicon-based heat-dissipation device which includes a base portion and a protrusion portion. The base portion has a first primary side and a second primary side opposite the first primary side. The protrusion portion is on the first primary side of the base portion and protruding therefrom. The protrusion portion includes multiple fins. Each of at least two immediately adjacent fins of the fins of the protrusion portion has a tapered profile in a cross-sectional view with a first width near a distal end of the respective fin being less than a second width at a base of the respective fin near the base portion of the heat-dissipation device.

What is claimed is: 
     
         1 . An apparatus, comprising:
 a silicon-based heat-dissipation device comprising:
 a base portion having a first primary side and a second primary side opposite the first primary side; and 
 a protrusion portion on the first primary side of the base portion and protruding therefrom, 
 wherein the second primary side of the base portion is configured to have one or more heat-generating devices embedded therein or physically coupled thereto such that at least a portion of heat generated by the one or more heat-generating devices is dissipated to the silicon-based heat-dissipation device by conduction. 
   
     
     
         2 . The apparatus of  claim 1 , wherein the base portion comprises a slit that communicatively connects the first primary side and the second primary side of the base portion. 
     
     
         3 . The apparatus of  claim 2 , wherein, when each of more than one heat-generating devices is embedded in or physically coupled to the base portion, at least a first heat-generating device of the more than one heat-generating devices is on a first side of the slit and at least a second heat-generating device of the more than one heat-generating devices is on a second side of the slit opposite the first side of the slit such that the slit severs a direct-line thermal coupling path via conduction through the base portion between the first and the second heat-generating devices. 
     
     
         4 . The apparatus of  claim 2 , wherein the slit comprises an L-shaped slit. 
     
     
         5 . The apparatus of  claim 1 , wherein the protrusion portion of the silicon-based heat-dissipation device comprises a plurality of fins. 
     
     
         6 . The apparatus of  claim 5 , wherein the plurality of fins comprises a plurality of straight fins. 
     
     
         7 . The apparatus of  claim 6 , wherein a ratio of a height of the fins, measured from the first primary side of the base portion in a direction perpendicular to the first primary side, to a thickness of each of the fins, measured across a respective one of the fins in a direction parallel to the first primary side of the base portion, is greater than 5:1. 
     
     
         8 . The apparatus of  claim 6 , wherein a ratio of a height of the fins, measured from the first primary side of the base portion in a direction perpendicular to the first primary side, to a thickness of the base portion, measured across the base portion in a direction parallel to the first primary side of the base portion, is greater than 5:1. 
     
     
         9 . The apparatus of  claim 6 , wherein a spacing between every two fins of the fins, measured between respective two fins of the fins in a direction parallel to the first primary side of the base portion, is greater than or equal to a thickness of each of the fins, measured across a respective one of the fins in the direction parallel to the first primary side of the base portion. 
     
     
         10 . The apparatus of  claim 5 , wherein the plurality of fins comprises a plurality of pin fins. 
     
     
         11 . The apparatus of  claim 5 , wherein the plurality of fins comprises a plurality of flared fins. 
     
     
         12 . The apparatus of  claim 1 , further comprising:
 one or more integrated circuits embedded in the second primary side of the base portion or one or more electrically-driven devices physically coupled to the second primary side of the base portion.   
     
     
         13 . The apparatus of  claim 2 , further comprising:
 one or more integrated circuits embedded in the second primary side of the base portion or one or more electrically-driven devices physically coupled to the second primary side of the base portion,   wherein at least a first one of the one or more integrated circuits or the one or more electrically-driven devices is on a first side of the slit,   wherein at least a second one of the one or more integrated circuits or the one or more electrically-driven devices is on a second side of the slit opposite the first side of the slit, and   wherein the slit severs a direct-line thermal coupling path via conduction through the base portion between the first one of the one or more integrated circuits or the one or more electrically-driven devices and the second one of the one or more integrated circuits or the one or more electrically-driven devices.   
     
     
         14 . The apparatus of  claim 1 , wherein the silicon-based heat-dissipation device is made of single-crystal silicon. 
     
     
         15 . An apparatus, comprising:
 a silicon-based heat-dissipation device comprising:
 a base portion having a first primary side and a second primary side opposite the first primary side; and 
 a protrusion portion on the first primary side of the base portion and protruding therefrom, the protrusion portion comprising a plurality of fins, 
 wherein each of at least two immediately adjacent fins of the fins of the protrusion portion has a tapered profile in a cross-sectional view with a first width near a distal end of the respective fin being less than a second width at a base of the respective fin near the base portion of the heat-dissipation device. 
   
     
     
         16 . The apparatus of  claim 15 , wherein the second primary side of the base portion is configured to have one or more heat-generating devices embedded therein or physically coupled thereto such that at least a portion of heat generated by the one or more heat-generating devices is dissipated to the silicon-based heat-dissipation device by conduction. 
     
     
         17 . The apparatus of  claim 15 , wherein a trench between the at least two immediately adjacent fins has a relatively flat surface with respect to a horizontal plane defined by the first primary side of the base portion. 
     
     
         18 . The apparatus of  claim 15 , wherein a trench between the at least two immediately adjacent fins has a V-shaped notch with respect to a horizontal plane defined by the first primary side of the base portion. 
     
     
         19 . The apparatus of  claim 15 , further comprising:
 one or more integrated circuits embedded in the second primary side of the base portion or one or more electrically-driven devices physically coupled to the second primary side of the base portion,   wherein the base portion comprises a slit that communicatively connects the first primary side and the second primary side of the base portion,   wherein at least a first one of the one or more integrated circuits or the one or more electrically-driven devices is on a first side of the slit,   wherein at least a second one of the one or more integrated circuits or the one or more electrically-driven devices is on a second side of the slit opposite the first side of the slit, and   wherein the slit severs a direct-line thermal coupling path via conduction through the base portion between the first one of the one or more integrated circuits or the one or more electrically-driven devices and the second one of the one or more integrated circuits or the one or more electrically-driven devices.   
     
     
         20 . The apparatus of  claim 15 , wherein the silicon-based heat-dissipation device is made of single-crystal silicon.