Substrate processing method and substrate processing system for performing the same

Abstract

In a supercritical fluid method a supercritical fluid is supplied into a process chamber. The supercritical fluid is discharged from the process chamber as a supercritical fluid process proceeds. A concentration of a target material included in the supercritical fluid discharged from the process chamber is detected during the supercritical fluid process. An end point of the supercritical fluid process may be determined based on a detected concentration of the target material.

What is claimed is: 
     
         1 . A processing system comprising:
 a process chamber;   a supply unit configured to supply a supercritical fluid to the process chamber;   a discharge unit configured to discharge the supercritical fluid from the process chamber; and   a detection unit provided in the discharge unit, and configured to detect a concentration of a target material included in the supercritical fluid discharged from the process chamber during a supercritical fluid process.   
     
     
         2 . The processing system of  claim 1 , wherein the detection unit is configured to determine an end point of the supercritical fluid process based on a detected concentration of the target material. 
     
     
         3 . The processing system of  claim 1 , wherein the detection unit comprises a heater for heating the supercritical fluid discharged from the process chamber to maintain a gas phase and a detector for detecting the concentration of a target material in the gas phase included in the supercritical fluid discharged from the process chamber. 
     
     
         4 . The processing system of  claim 1 , wherein the detection unit comprises a condenser for condensing the supercritical fluid discharged from the process chamber to a liquid phase and a detector for detecting the concentration of a target material in the liquid phase included in the supercritical fluid discharged from the process chamber. 
     
     
         5 . The processing system of  claim 4 , wherein the detection unit further comprises a mixer for mixing the supercritical fluid discharged from the process chamber with a reference liquid, and the detector detects a relative concentration of the target material in the liquid phase with respect to the reference liquid. 
     
     
         6 . The processing system of  claim 2 , further comprising a control unit connected to the process chamber, the supply unit, and the discharge unit, to determine the end point of the supercritical fluid process and control operations of the processing system. 
     
     
         7 . The processing system of  claim 1 , further comprising a valve to control a flow rate of the supercritical fluid to the detection unit. 
     
     
         8 . The processing system of  claim 1 , further comprising a chamber detector to detect a concentration of the target material in the process chamber. 
     
     
         9 . The processing system of  claim 1 , wherein the discharge unit further comprises at least two discharge pipes, wherein at least one of the two discharge pipes is connected to the detection unit.