Pad conditioning process control using laser conditioning

Abstract

A method and apparatus for conditioning a polishing pad used in a substrate polishing process. In one embodiment, a method for conditioning a polishing pad utilized to polish a substrate is provided. The method includes providing relative motion between an optical device and a polishing pad having a polishing medium disposed thereon, and scanning a processing surface of the polishing pad with a laser beam to condition the processing surface, wherein the laser beam has a wavelength that is substantially transparent to the polishing medium, but is reactive with the material of the polishing pad.

What is claimed is: 
     
         1 . A method for conditioning a polishing pad utilized to polish a substrate, the method comprising:
 providing relative motion between an optical device and a polishing pad having a polishing medium disposed thereon; and   scanning a processing surface of the polishing pad with a laser beam to form a groove pattern on the processing surface, wherein the laser beam has a wavelength that is substantially transparent to the polishing medium, but is reactive with the material of the polishing pad.   
     
     
         2 . The method of  claim 1 , further comprising:
 monitoring a state of the processing surface during polishing of a substrate.   
     
     
         3 . The method of  claim 2 , wherein the state of the processing surface is monitored by at least one sensor. 
     
     
         4 . The method of  claim 3 , wherein the at least one sensor comprises an optical sensor, a capacitive sensor, a rotational sensor, a shear force sensors an eddy current sensor, and combinations thereof. 
     
     
         5 . The method of  claim 3 , further comprising:
 adjusting conditioning parameters in response to a metric provided by the at least one sensor.   
     
     
         6 . The method of  claim 5 , wherein the adjusting conditioning parameters includes adjusting a spot size of the beam. 
     
     
         7 . The method of  claim 5 , wherein the adjusting conditioning parameters includes adjusting a pulse frequency, a number of pulses, and/or a pulse length of the beam. 
     
     
         8 . The method of  claim 5 , wherein the adjusting conditioning parameters includes adjusting an angle of incidence of the beam relative to the processing surface. 
     
     
         9 . The method of  claim 5 , wherein the adjusting conditioning parameters includes adjusting an output power of the laser device. 
     
     
         10 . A method for polishing a substrate, comprising:
 urging a substrate against a processing surface of a polishing pad while providing relative movement between the substrate and the polishing pad;   providing a polishing medium to the processing surface;   monitoring a state of the processing surface during the relative movement; and   conditioning the processing surface with an optical device comprising a laser emitter adapted to emit a beam having a wavelength range that is substantially non-reactive with the polishing medium, but is reactive with the polishing pad.   
     
     
         11 . The method of  claim 10 , further comprising:
 adjusting conditioning parameters based on a metric provided by one or more sensors.   
     
     
         12 . The method of  claim 11 , wherein the adjusting conditioning parameters includes adjusting a spot size of the beam. 
     
     
         13 . The method of  claim 11 , wherein the adjusting conditioning parameters includes adjusting a pulse frequency, a number of pulses, and/or a pulse length of the beam. 
     
     
         14 . The method of  claim 11 , wherein the adjusting conditioning parameters includes adjusting an angle of incidence of the beam relative to the processing surface. 
     
     
         15 . The method of  claim 11 , wherein the adjusting conditioning parameters includes adjusting an output power of the laser device. 
     
     
         16 . A method for conditioning a polishing pad, comprising:
 scanning a beam relative to a processing surface of the polishing pad having water disposed thereon, the beam having a wavelength range that is non-reactive with the water, but is reactive with the polishing pad; and   conditioning the processing surface of the polishing pad.   
     
     
         17 . The method of  claim 16 , further comprising:
 monitoring a topography of the processing surface.   
     
     
         18 . The method of  claim 17 , further comprising:
 adjusting conditioning parameters in response to a metric provided by one or more sensors.   
     
     
         19 . The method of  claim 18 , wherein the adjusting conditioning parameters includes adjusting a spot size of the beam. 
     
     
         20 . The method of  claim 18 , wherein the adjusting conditioning parameters includes adjusting a pulse frequency, a number of pulses, and/or a pulse length of the beam. 
     
     
         21 . The method of  claim 18 , wherein the adjusting conditioning parameters includes adjusting an angle of incidence of the beam relative to the processing surface. 
     
     
         22 . The method of  claim 18 , wherein the adjusting conditioning parameters includes adjusting an output power of the laser device.