Integration of absorption based heating bake methods into a photolithography track system

Abstract

A method of patterning a layered substrate is provided that includes forming a layer of a block copolymer on a substrate; and annealing the layer of the block copolymer to affect microphase segregation such that self-assembled domains are formed by application of an absorption based heating method. Exemplary absorption based heating methods include electromagnetic radiation sources such as broadband flash lamps, light emitting diodes, lasers, or DUV flash lamps. The method may also include a metrology review and an application of the absorption based heating to at least a portion of the layered substrate to refine or modify the microphase segregation.

What is claimed is: 
     
         1 . A method of patterning a layered substrate, comprising:
 a) forming a layer of a block copolymer; and   b) annealing the layer of the block copolymer to affect microphase segregation such that self-assembled domains are formed, wherein the annealing is performed by application of an absorption based heating method provided by exposure to electromagnetic radiation to provide an annealing temperature in a range of 250° C. to 500° C.   
     
     
         2 . The method of  claim 1 , wherein the exposure to electromagnetic radiation is performed at a power density in a range from 1 W/mm 2  to 100 W/mm 2  for a duration of time in a range from 1 second to 10 seconds. 
     
     
         3 . The method of  claim 1 , wherein the absorption based heating method is provided by exposure to an electromagnetic radiation source selected from the group consisting of a broadband flash lamp, a light emitting diode; a laser, and a deep ultraviolet (DUV) flash lamp. 
     
     
         4 . The method of  claim 3 , wherein the electromagnetic radiation source is the laser, which is selected from a diode laser emitting electromagnetic radiation having a wavelength in a range from 500 nm to 1100 nm, or a carbon dioxide laser emitting electromagnetic radiation having a wavelength of 9.4 μm or 10.6 μm. 
     
     
         5 . The method of  claim 4 , wherein the laser is a diode laser emitting electromagnetic radiation having a wavelength in a range from 800 nm to 1000 nm. 
     
     
         6 . The method of  claim 1 , wherein annealing the layer of the block copolymer comprises:
 a) selecting a beam shape of the electromagnetic radiation to distribute power across a predetermined absorption area;   b) determining a number of scans for the selected beam shape to irradiate a desired area of the layer of the block copolymer with the electromagnetic radiation; and   c) scanning the layer of the block copolymer with the electromagnetic radiation to heat the layer of the block copolymer to the annealing temperature range.   
     
     
         7 . The method of  claim 6 , wherein the scanning the layer of the block copolymer with the electromagnetic radiation is performed with a single pass. 
     
     
         8 . The method of  claim 6 , wherein the scanning the layer of the block copolymer with the electromagnetic radiation is performed with a repetitive scan or by offset raster scanning. 
     
     
         9 . A method of patterning a layered substrate, comprising:
 a) forming a layer of a block copolymer;   b) performing a first annealing treatment of the layer of the block copolymer to affect microphase segregation such that self-assembled domains are formed; and   c) exposing at least a portion of the layer of the block copolymer to electromagnetic radiation to heat the exposed portion of the layer of the block copolymer to an annealing temperature in a range of 250° C. to 500° C.   
     
     
         10 . The method of  claim 9 , wherein exposing at least a portion of the layer of the block copolymer to electromagnetic radiation is performed at a power density in a range from 1 W/mm 2  to 100 W/mm 2  for a duration of time in a range from 1 second to 10 seconds. 
     
     
         11 . The method of  claim 9 , wherein the first annealing treatment comprising a single wafer bake on a heating plate; a batch wafer bake in a furnace; a single wafer solvent bake on a heating plate; a batch wafer solvent bake in a furnace; or an absorption based heating method on a single wafer provided by exposure to electromagnetic radiation. 
     
     
         12 . The method of  claim 11 , wherein the first annealing treatment of the layer of the block copolymer is a single wafer solvent bake on a heating plate or a batch wafer solvent bake in a furnace at a first annealing temperature, which provides the self-assembled domains having a first morphology; and wherein the exposing at least the portion of the layer of the block copolymer to electromagnetic radiation is performed to a second annealing temperature to provide self-assembled domains having a second morphology, said first annealing temperature being less than the second annealing temperature. 
     
     
         13 . The method of  claim 9 , wherein performing the first annealing treatment of the layer of the block copolymer is conducted at a first annealing temperature to provide the self-assembled domains having a first morphology; and wherein the exposing at least the portion of the layer of the block copolymer to electromagnetic radiation heats the exposed potion of the layer of the block copolymer to a second annealing temperature to provide self-assembled domains having a second morphology, said first annealing temperature being less than the second annealing temperature. 
     
     
         14 . The method of  claim 9 , wherein the exposing at least the portion of the layer of the block copolymer to electromagnetic radiation heats the exposed potion of the layer of the block copolymer to a temperature sufficient to degrade a first polymer block of the block copolymer. 
     
     
         15 . The method of  claim 14 , wherein degrading the first polymer block of the block copolymer increases an etch selectivity of the first polymer block over a second polymer of the block copolymer. 
     
     
         16 . The method of  claim 14 , wherein degrading the first polymer block of the block copolymer substantially removes the first polymer block. 
     
     
         17 . The method of  claim 9 , wherein exposing at least a portion of the layer of the block copolymer to electromagnetic radiation comprises:
 i) selecting a beam shape of the electromagnetic radiation to distribute power across a predetermined absorption area;   ii) determining a number of scans for the selected beam shape to irradiate a desired area of the layer of the block copolymer with the electromagnetic radiation; and   iii) scanning the layer of the block copolymer with the electromagnetic radiation to heat the layer of the block copolymer to the annealing temperature range.   
     
     
         18 . The method of  claim 9 , further comprising:
 d) performing a metrology review of the layered substrate between steps b) and c).   
     
     
         19 . The method of  claim 9 , wherein the exposing at least a portion of the layer of the block copolymer to electromagnetic radiation in step c) is performed prior to b), and the method further comprising:
 d) performing a metrology review of the layered substrate between steps b) and c).   
     
     
         20 . The method of  claim 18 , wherein the metrology review is performed with a reflectometer. 
     
     
         21 . The method of  claim 18 , wherein the metrology review is a pattern defect wafer inspection, and wherein defects are binned. 
     
     
         22 . The method of  claim 18 , wherein the metrology review identifies a number of defects that is greater than a threshold value, and wherein step c) is performed over the entire layer of the block copolymer. 
     
     
         23 . The method of  claim 18 , wherein the metrology review identifies a number of defects that is less than a threshold value and identifies a specific defect wafer location; and wherein step c) is performed on the specific defect wafer location.