Advanced Targeted Microwave Degas System

Abstract

In some embodiments, methods are described that allow the processing of a substrate using microwave-based degas systems. The methods allow process variables such as power, dwell time, frequency, backside cooling gas usage, backside cooling gas flow rate, and the like to be investigated. In some embodiments, apparatus are described that allow the investigation of process variables used in microwave-based degas systems to remove adsorbed species from the surface of a substrate. The apparatus allow process variables such as power, dwell time, frequency, backside cooling gas usage, backside cooling gas flow rate, and the like to be investigated.

What is claimed: 
     
         1 . A method for processing a substrate, the method comprising
 transferring a substrate into a first process chamber;   exposing a surface of the substrate to microwave radiation, wherein the microwave radiation has a frequency of about 2.45 GHz;   after the exposing, transferring the substrate to a second process chamber; and   after the transferring, processing the substrate.   
     
     
         2 . The method of  claim 1 , wherein the frequency of the microwave radiation is varied in a continuous manner around 2.45 GHz during the exposing. 
     
     
         3 . The method of  claim 1 , wherein the substrate comprises one of silicon, germanium, silicon-germanium alloy, silica, sapphire, zinc oxide, silicon carbide, aluminum nitride, gallium nitride, Spinel, coated silicon, silicon on oxide, silicon carbide on oxide, glass, gallium arsenide, indium phosphide, and combinations (or alloys) thereof. 
     
     
         4 . The method of  claim 1 , further comprising heating a backside of the substrate during the exposing. 
     
     
         5 . The method of  claim 1 , further comprising cooling a backside of the substrate during the exposing. 
     
     
         6 . The method of  claim 1 , wherein a pressure within the first process chamber during the exposing is between 1 mTorr and 760 Torr. 
     
     
         7 . The method of  claim 1 , wherein processing the substrate comprises a surface treatment process. 
     
     
         8 . The method of  claim 7 , wherein processing the substrate comprises a plasma treatment process. 
     
     
         9 . The method of  claim 7 , wherein processing the substrate comprises a thermal treatment process. 
     
     
         10 . The method of  claim 1 , wherein processing the substrate comprises a deposition process. 
     
     
         11 . The method of  claim 10 , wherein the processing the substrate comprises one of atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), pulsed laser deposition (PLD), or molecular beam epitaxy (MBE). 
     
     
         12 . The method of  claim 1 , wherein processing the substrate comprises one of a conventional process or a high productivity combinatorial process. 
     
     
         13 . An apparatus comprising:
 a first process chamber;   a remote microwave source;   a waveguide, wherein the waveguide is operable to deliver microwave radiation from the remote microwave source to the first process chamber;   a substrate support; and   a delivery nozzle, wherein the delivery nozzle is operable to deliver microwave radiation from the waveguide to a surface of a substrate disposed upon the substrate support.   
     
     
         14 . The apparatus of  claim 13 , wherein the remote microwave source generates microwave radiation having a frequency of about 2.45 GHz. 
     
     
         15 . The apparatus of  claim 13 , further comprising a second process chamber. 
     
     
         16 . The apparatus of  claim 15 , further comprising a robot, wherein the robot is operable to transport the substrate from the first process chamber to the second process chamber. 
     
     
         17 . The apparatus of  claim 15 , wherein the second process chamber is operable to apply a plasma surface treatment to the substrate. 
     
     
         18 . The apparatus of  claim 15 , wherein the second process chamber is operable to apply a thermal surface treatment to the substrate. 
     
     
         19 . The apparatus of  claim 15 , wherein the second process chamber is operable to apply a deposition process to the substrate. 
     
     
         20 . The apparatus of  claim 19 , wherein the deposition process comprises one of atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), pulsed laser deposition (PLD), or molecular beam epitaxy (MBE).