Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor

Abstract

A processing system includes: a vacuum chamber; a plurality of processing systems attached around the vacuum chamber; and a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum. A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising: a target comprising molybdenum, molybdenum alloy, or a combination thereof.

What is claimed is: 
     
         1 . A processing system comprising:
 a vacuum chamber;   a plurality of processing systems attached around the vacuum chamber; and   a wafer handling system in the vacuum chamber for moving the wafer among the plurality of processing systems without exiting from a vacuum.   
     
     
         2 . The system as claimed in  claim 1  wherein the plurality of processing systems includes a degas system. 
     
     
         3 . The system as claimed in  claim 1  wherein the plurality of processing systems includes a physical vapor deposition system. 
     
     
         4 . The system as claimed in  claim 1  wherein the plurality of processing systems includes a preclean system. 
     
     
         5 . The system as claimed in  claim 1  further comprising an output for outputting an extreme ultraviolet mask blank. 
     
     
         6 . The system as claimed in  claim 1  further comprising an output for outputting an extreme ultraviolet mirror. 
     
     
         7 . The system as claimed in  claim 1  further comprising:
 an additional vacuum chamber connected to the vacuum chamber; 
 an additional plurality of processing systems attached around the additional vacuum chamber; and 
 an additional wafer handling system in the additional vacuum chamber for moving the wafer among the additional plurality of processing systems without exiting from a vacuum. 
 
     
     
         8 . The system as claimed in  claim 5  wherein the additional plurality of processing systems includes a flowable chemical vapor deposition system. 
     
     
         9 . The system as claimed in  claim 5  wherein the additional plurality of processing systems includes a cure chamber. 
     
     
         10 . The system as claimed in  claim 5  wherein the additional plurality of processing systems includes a multi-cathode source. 
     
     
         11 . The system as claimed in  claim 10  further comprising a top adapter having provisions for a number of cathode sources around the top adapter. 
     
     
         12 . The system as claimed in  claim 10  further comprising a rotating pedestal for securing a wafer. 
     
     
         13 . The system as claimed in  claim 10  wherein the multi-cathode source comprises a plurality of cathodes and further comprising a rotating pedestal for placing a wafer at an angle to each of the plurality of cathodes. 
     
     
         14 . The system as claimed in  claim 10  wherein the multi-cathode source comprises a plurality of cathodes and further comprising a shroud attached to each of the plurality of cathodes. 
     
     
         15 . The system as claimed in  claim 10  wherein the multi-cathode source comprises a plurality of cathodes and further comprising a rotating shield for rotation among the one or more of the plurality of cathodes. 
     
     
         16 . The system as claimed in  claim 10  further comprising an edge exclusion cover mask for covering the edges of a wafer to prevent deposition of material in the edge areas of the wafer. 
     
     
         17 . The system as claimed in  claim 10  further comprising a carrier having support pins for supporting a wafer and retaining pins for laterally retaining the wafer. 
     
     
         18 . The system as claimed in  claim 10  further comprising a carrier having support pins for supporting a wafer and retaining pins for laterally retaining the wafer, the carrier having an opening to allow for deposition from below. 
     
     
         19 . A physical vapor deposition system for manufacturing an extreme ultraviolet blank comprising:
 a target comprising molybdenum, molybdenum alloy, or a combination thereof.   
     
     
         20 . The system of  claim 19  further comprising:
 a second target comprising silicon. 
 
     
     
         21 . A method of forming a EUV mask blank, comprising:
 forming a planarization layer by chemical vapor deposition over a substrate; and   forming a multi-layer stack over the planarization layer by physical vapor deposition wherein forming the planarization layer and forming the multi-layer stack are performed in a production system without removing the substrate from vacuum.   
     
     
         22 . The method as claimed in  claim 21  further applying a capping layer to the multi-layer stack without removing the substrate from the vacuum.