US2014264956A1PendingUtilityA1
Sealant laminated composite, sealed semiconductor devices mounting substrate, sealed semiconductor devices forming wafer, semiconductor apparatus, and method for manufacturing semiconductor apparatus
Est. expiryFeb 7, 2032(~5.5 yrs left)· nominal 20-yr term from priority
H10W 74/00H10P 54/00H10W 90/734H10W 72/351H10W 74/121H10W 74/47H10W 74/10H10W 72/0198H10W 74/40H10W 74/014H10W 74/01Y10T428/26Y10T428/269B32B 5/00Y10T428/31511Y10T428/31504Y10T428/31663Y10T428/24942B32B 27/00H01L 23/31H01L 21/561H01L 21/78
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Claims
Abstract
Disclosed is a sealant laminated composite for collectively sealing a semiconductor devices mounting surface of a substrate on which semiconductor devices may be mounted or a semiconductor devices forming surface of a wafer on which semiconductor devices may be formed, including a support wafer that may be composed of silicon and an uncured resin layer that may be constituted of an uncured thermosetting resin formed on one side of the support wafer.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A sealant laminated composite for collectively sealing a semiconductor devices mounting surface of a substrate on which semiconductor devices are mounted or a semiconductor devices forming surface of a wafer on which semiconductor devices are formed, comprising:
a support wafer composed of silicon; and an uncured resin layer constituted of an uncured thermosetting resin formed on one side of the support wafer.
2 . The sealant laminated composite according to claim 1 , wherein difference between an expansion coefficient of the support wafer and that of the substrate on which the semiconductor devices are mounted or the wafer on which the semiconductor devices are formed is 3 ppm or less.
3 . The sealant laminated composite according to claim 1 , wherein a thickness of the uncured resin layer is 20 μm or more and 2000 μm or less.
4 . The sealant laminated composite according to claim 2 , wherein a thickness of the uncured resin layer is 20 μm or more and 2000 μm or less.
5 . The sealant laminated composite according to claim 1 , wherein the uncured resin layer contains any one of an epoxy resin, a silicone resin, and an epoxy/silicone mixed resin that solidify at less than 50° C. and melt at 50° C. or more and 150° C. or less.
6 . The sealant laminated composite according to claim 2 , wherein the uncured resin layer contains any one of an epoxy resin, a silicone resin, and an epoxy/silicone mixed resin that solidify at less than 50° C. and melt at 50° C. or more and 150° C. or less.
7 . The sealant laminated composite according to claim 3 , wherein the uncured resin layer contains any one of an epoxy resin, a silicone resin, and an epoxy/silicone mixed resin that solidify at less than 50° C. and melt at 50° C. or more and 150° C. or less.
8 . The sealant laminated composite according to claim 4 , wherein the uncured resin layer contains anyone of an epoxy resin, a silicone resin, and an epoxy/silicone mixed resin that solidify at less than 50° C. and melt at 50° C. or more and 150° C. or less.
9 . A sealed semiconductor devices mounting substrate, wherein a semiconductor devices mounting surface of a substrate on which semiconductor devices are mounted is covered with the uncured resin layer of the sealant laminated composite according to claim 1 , and the uncured resin layer is heated and cured to collectively seal the semiconductor devices mounting surface with the sealant laminated composite.
10 . A sealed semiconductor devices mounting substrate, wherein a semiconductor devices mounting surface of a substrate on which semiconductor devices are mounted is covered with the uncured resin layer of the sealant laminated composite according to claim 8 , and the uncured resin layer is heated and cured to collectively seal the semiconductor devices mounting surface with the sealant laminated composite.
11 . A sealed semiconductor devices forming wafer, wherein a semiconductor devices forming surface of a wafer on which semiconductor devices are formed is covered with the uncured resin layer of the sealant laminated composite according to claim 1 , and the uncured resin layer is heated and cured to collectively seal the semiconductor devices forming surface with the sealant laminated composite.
12 . A sealed semiconductor devices forming wafer, wherein a semiconductor devices forming surface of a wafer on which semiconductor devices are formed is covered with the uncured resin layer of the sealant laminated composite according to claim 8 , and the uncured resin layer is heated and cured to collectively seal the semiconductor devices forming surface with the sealant laminated composite.
13 . A semiconductor apparatus obtained by dicing the sealed semiconductor devices mounting substrate according to claim 9 into each piece.
14 . A semiconductor apparatus obtained by dicing the sealed semiconductor devices mounting substrate according to claim 10 into each piece.
15 . A semiconductor apparatus obtained by dicing the sealed semiconductor devices forming wafer according to claim 11 into each piece.
16 . A semiconductor apparatus obtained by dicing the sealed semiconductor devices forming wafer according to claim 12 into each piece.
17 . A method for manufacturing a semiconductor apparatus, comprising the steps of:
covering a semiconductor devices mounting surface of a substrate on which semiconductor devices are mounted, or a semiconductor devices forming surface of a wafer on which semiconductor devices are formed with the uncured resin layer of the sealant laminated composite according to claim 1 ; collectively sealing the semiconductor devices mounting surface or the semiconductor devices forming surface by heating and curing the uncured resin layer to form a sealed semiconductor devices mounting substrate or a sealed semiconductor devices forming wafer; and dicing the sealed semiconductor devices mounting substrate or the sealed semiconductor devices forming wafer into each piece to manufacture the semiconductor apparatus.
18 . A method for manufacturing a semiconductor apparatus, comprising the steps of:
covering a semiconductor devices mounting surface of a substrate on which semiconductor devices are mounted, or a semiconductor devices forming surface of a wafer on which semiconductor devices are formed with the uncured resin layer of the sealant laminated composite according to claim 8 ; collectively sealing the semiconductor devices mounting surface or the semiconductor devices forming surface by heating and curing the uncured resin layer to form a sealed semiconductor devices mounting substrate or a sealed semiconductor devices forming wafer; and dicing the sealed semiconductor devices mounting substrate or the sealed semiconductor devices forming wafer into each piece to manufacture the semiconductor apparatus.Join the waitlist — get patent alerts
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