Methods of forming low defect replacement fins for a finfet semiconductor device and the resulting devices

Abstract

One illustrative device disclosed herein includes a substrate fin formed in a substrate comprised of a first semiconductor material, wherein at least a sidewall of the substrate fin is positioned substantially in a <100> crystallographic direction of the crystalline structure of the substrate, a replacement fin structure positioned above the substrate fin, wherein the replacement fin structure is comprised of a semiconductor material that is different from the first semiconductor material, and a gate structure positioned around at least a portion of the replacement fin structure.

What is claimed: 
     
         1 . A device, comprising:
 a substrate fin formed in a substrate comprised of a first semiconductor material having a crystalline structure, wherein at least a sidewall of said substrate fin is positioned substantially in a <100> crystallographic direction of said crystalline structure of said substrate;   a replacement fin structure positioned above said substrate fin, said replacement fin structure comprised of a semiconductor material that is different from said first semiconductor material; and   a gate structure positioned around at least a portion of said replacement fin structure.   
     
     
         2 . The device of  claim 1 , wherein said substrate is a (100) substrate and said substrate fin has a long axis, wherein said long axis of said substrate fin is positioned in a <100> crystallographic direction of said (100) substrate. 
     
     
         3 . The device of  claim 1 , wherein said substrate is a (110) substrate and said substrate fin has a long axis, wherein said long axis of said substrate fin is positioned in a <110> crystallographic direction of said crystalline structure of said (110) substrate. 
     
     
         4 . The device of  claim 1 , wherein said substrate is one of a (100) silicon substrate or a (110) silicon substrate. 
     
     
         5 . The device of  claim 1 , wherein said replacement fin structure is comprised of one of silicon/germanium, germanium, InP, InAs, GaAs, InGaAs, InSb, InGaSb or a III-V material. 
     
     
         6 . The device of  claim 5 , wherein said substrate is comprised of silicon. 
     
     
         7 . The device of  claim 1 , wherein said substrate is comprised of silicon and said replacement fin structure is comprised of silicon/germanium. 
     
     
         8 . A device, comprising:
 a substrate fin formed in a (100) substrate comprised of silicon, wherein a long axis of said substrate fin is positioned in a <100> crystallographic direction of said crystalline structure of said (100) substrate;   a replacement fin structure positioned above said substrate fin, said replacement fin structure comprised of a semiconductor material that is different from said first semiconductor material; and   a gate structure positioned around at least a portion of said replacement fin structure.   
     
     
         9 . The device of  claim 8 , wherein said replacement fin structure is comprised of one of silicon/germanium, germanium, InP, InAs, GaAs, InGaAs, InSb, InGaSb or a III-V material. 
     
     
         10 . A device, comprising:
 a substrate fin formed in a (110) substrate comprised of silicon, wherein a long axis of said substrate fin is positioned in a <110> crystallographic direction of said crystalline structure of said (110) substrate;   a replacement fin structure positioned above said substrate fin, said replacement fin structure comprised of a semiconductor material that is different from said first semiconductor material; and   a gate structure positioned around at least a portion of said replacement fin structure.   
     
     
         11 . The device of  claim 10 , wherein said replacement fin structure is comprised of one of silicon/germanium, germanium, InP, InAs, GaAs, InGaAs, InSb, InGaSb or a III-V material. 
     
     
         12 . A method of forming a FinFET device, comprising:
 forming a substrate fin in a substrate such that at least a sidewall of said substrate fin is positioned substantially in a <100> crystallographic direction of said substrate;   forming a replacement fin above said substrate fin; and   forming a gate structure around at least a portion of said replacement fin.   
     
     
         13 . The method of  claim 12 , wherein said substrate is a (100) substrate and wherein said substrate fin is formed such that a long axis of said substrate fin is positioned in a <100> crystallographic direction of said (100) substrate. 
     
     
         14 . The method of  claim 12 , wherein said substrate is a (110) substrate and wherein said substrate fin is formed such that a long axis of said substrate fin is positioned in a <110> crystallographic direction of said (110) substrate. 
     
     
         15 . The method of  claim 12 , wherein said replacement fin is comprised of one of silicon/germanium, germanium, InP, InAs, GaAs, InGaAs, InSb, InGaSb or a III-V material. 
     
     
         16 . The method of  claim 12 , wherein said substrate is comprised of silicon. 
     
     
         17 . A method of forming a FinFET device, comprising:
 obtaining a (100) silicon substrate;   forming a substrate fin in said substrate such that a long axis of said substrate fin is oriented at relative angle of 45 degrees relative to a <010> direction of said (100) silicon substrate;   forming a replacement fin above said substrate fin; and   forming a gate structure around at least a portion of said replacement fin.   
     
     
         18 . The method of  claim 17 , wherein said replacement fin is comprised of one of silicon/germanium, germanium, InP, InAs, GaAs, InGaAs, InSb, InGaSb or a III-V material. 
     
     
         19 . A method of forming a FinFET device, comprising:
 obtaining a (110) silicon substrate;   forming a substrate fin in said substrate such that a long axis of said substrate fin is oriented at relative angle of 90 degrees relative to a <100> direction of said (110) silicon substrate;   forming a replacement fin above said substrate fin; and   forming a gate structure around at least a portion of said replacement fin.   
     
     
         20 . The method of  claim 19 , wherein said replacement fin is comprised of one of silicon/germanium, germanium, InP, InAs, GaAs, InGaAs, InSb, InGaSb or a III-V material.