Charge Dissipation of Cavities

Abstract

Structures and methods for the dissipation of charge build-up during the formation of cavities in semiconductor substrates.

1 - 25 . (canceled) 
     
     
         26 . An integrated circuit device comprising:
 a semiconductor substrate that includes a silicon oxide-containing material over a base semiconductor material;   a metallic dissipation material over an upper surface of the silicon oxide-containing material;   a hardmask over the metallic dissipation material;   a cavity extending through the hardmask and the dissipation material, and into the silicon oxide-containing material; and   a sidewall of the cavity comprising an exposed ledge of the metallic dissipation material inward of a region of the sidewall along the hardmask.   
     
     
         27 - 32 . (canceled) 
     
     
         33 . The integrated circuit device of  claim 26  wherein the dissipation material comprises one or both of gold and platinum. 
     
     
         34 . The integrated circuit device of  claim 26  wherein the dissipation material comprises gold. 
     
     
         35 . The integrated circuit device of  claim 26  wherein the dissipation material comprises platinum. 
     
     
         36 . The integrated circuit device of  claim 26  wherein the exposed ledge of the metallic dissipation material protrudes into the cavity inward of a region of the sidewall along the silicon oxide-containing material.