US2014246596A1PendingUtilityA1

Photodiode and other sensor structures in flat-panel x-ray imagers and method for improving topological uniformity of the photodiode and other sensor structures in flat-panel x-ray imagers based on thin-film electronics

Assignee: UNIV MICHIGANPriority: Jun 17, 2009Filed: May 12, 2014Published: Sep 4, 2014
Est. expiryJun 17, 2029(~2.9 yrs left)· nominal 20-yr term from priority
G01T 1/208G01T 1/241H10F 30/223H10F 39/014H10F 39/1898H10F 39/189H10F 39/026H10F 39/8037H10F 39/805H10F 39/811H10F 39/12H10F 39/8023G01T 1/20184
54
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A radiation sensor including a scintillation layer configured to emit photons upon interaction with ionizing radiation and a photodetector including in order a first electrode, a photosensitive layer, and a photon-transmissive second electrode disposed in proximity to the scintillation layer. The photosensitive layer is configured to generate electron-hole pairs upon interaction with a part of the photons. The radiation sensor includes pixel circuitry electrically connected to the first electrode and configured to measure an imaging signal indicative of the electron-hole pairs generated in the photosensitive layer and a planarization layer disposed on the pixel circuitry between the first electrode and the pixel circuitry such that the first electrode is above a plane including the pixel circuitry. A surface of at least one of the first electrode and the second electrode at least partially overlaps the pixel circuitry and has a surface inflection above features of the pixel circuitry. The surface inflection has a radius of curvature greater than one half micron.

Claims

exact text as granted — not AI-modified
1 . A radiation sensor comprising:
 a scintillation layer configured to emit photons upon interaction with ionizing radiation;   a photodetector including in order a first electrode, a photosensitive layer, and a photon-transmissive second electrode disposed in proximity to the scintillation layer;   said photosensitive layer configured to generate electron-hole pairs upon interaction with a part of said photons;   pixel circuitry electrically connected to the first electrode and configured to measure an imaging signal indicative of said electron-hole pairs generated in the photosensitive layer;   a planarization layer disposed on the pixel circuitry between the first electrode and the pixel circuitry such that the first electrode is above a plane including the pixel circuitry; and   a surface of at least one of said first electrode and said second electrode at least partially overlapping the pixel circuitry and having a surface inflection above features of the pixel circuitry.

Join the waitlist — get patent alerts

Track US2014246596A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.