Light-emitting semiconductor device using group iii nitrogen compound

Abstract

A method of producing a light-emitting semiconductor device of a group III nitride compound includes forming a buffer layer on a sapphire substrate, forming a Si-doped N + -layer with supplying silane, the N + -layer satisfying formula (Al x3 Ga 1-x3 ) y3 In 1-y3 N, wherein 0≦x3≦1, 0≦y3≦1 and 0≦x3+y3≦1, forming an emission layer of a group III nitride compound semiconductor satisfying formula Al x1 Ga y1 In 1-x1-y1 N, where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1, on the N + -layer, and forming a P-layer of a P-type conduction on the emission layer, the P-layer including aluminum gallium nitride satisfying formula Al x2 Ga 1-x2 N, wherein 0≦x2≦1.

What is claimed: 
     
         1 . A method of producing a light-emitting semiconductor device of a group III nitride compound, the method comprising:
 forming a buffer layer on a sapphire substrate;   forming a Si-doped N + -layer with supplying silane, the N + -layer satisfying formula (Al x3 Ga 1-x3 ) y3 In 1-y3 N, wherein 0≦x3≦1, 0≦y3≦1 and 0≦x3+y3≦1;   forming an emission layer of a group III nitride compound semiconductor satisfying formula Al x1 Ga y1 In 1-x1-y1 N, where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1, on the N + -layer; and   forming a P-layer of a P-type conduction on said emission layer, the P-layer comprising aluminum gallium nitride satisfying formula Al x2 Ga 1-x2 N, wherein 0≦x2≦1.   
     
     
         2 . A method of producing a light-emitting semiconductor device of a group III nitride compound, the method comprising:
 forming a buffer layer on a sapphire substrate;   forming a Si-doped N + -layer with supplying silane, the N + -layer satisfying formula (Al x3 Ga 1-x3 ) y3 In 1-y3 N, wherein 0≦x3≦1, 0≦y3≦1, and 0≦x3+y3≦1;   forming an emission layer of a group III nitride compound semiconductor satisfying formula Al x1 Ga y1 In 1-x1-y1 N, where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1, on the N + -layer; and   forming a Mg-doped contact layer.   
     
     
         3 . A method of producing a light-emitting semiconductor device of a group III nitride compound, the method comprising:
 cleaning a sapphire substrate by an organic washing solvent and heat treatment;   forming a buffer layer on the sapphire substrate;   forming Si-doped N + -layer with supplying silane, the N + -layer satisfying formula (Al x3 Ga 1-x3 ) y3 In 1-y3 N, wherein 0≦x3≦1, 0≦y3≦1, and 0≦x3+y3≦1;   forming an emission layer of a group III nitride compound semiconductor satisfying formula, Al x1 Ga y1 In 1-x1-y1 N, where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1, on the N + -layer;   forming a P-layer of a P-type conduction, on the emission layer, the P-layer comprising aluminum gallium nitride satisfying formula Al x2 Ga 1-x2 N, wherein 0≦x2≦1; and   forming a Mg-doped contact layer on the P-layer.   
     
     
         4 . A semiconductor light emitting device, comprising:
 an n-type clad layer consisting of a gallium nitride base compound semiconductor;   an active layer consisting of a gallium nitride based compound semiconductor, said active layer comprising a material having a band gap energy smaller than that of said n-type clad layer; and   a p-type clad layer consisting of a gallium nitride based compound semiconductor, said p-type clad layer comprising a material having a band gap energy greater than that of said active layer, and sandwiching said active layer accompanying with said n-type clad layer,   wherein materials of said n-type clad layer and said p-type clad layer are selected as to make the band gap energy of said n-type clad layer smaller than the band gap energy of said p-type clad layer.   
     
     
         5 . A semiconductor light emitting device, comprising:
 a substrate; and   GaN-type compound semiconductor layers stacked on the substrate, the GaN-type compound semiconductor layers including:
 at least one active layer; 
 at least one n-type layer; and 
 at least one p-type layer, 
   wherein a band gap energy of the one n-type layer is smaller than a band gap energy of the one p-type layer.