Semiconductor module

Abstract

A semiconductor module including a semiconductor chip having a light receiving device formed at a front thereof and light permeable cover having a front, a back, and a side. The light permeable cover is disposed opposite to the front of the semiconductor chip such that the front of the semiconductor chip is covered by the back of the light permeable cover. The permeable cover is provided at the outer circumferential region of the front thereof and at the side thereof with a light shielding layer. It is possible to prevent the incidence of unnecessary light from the side of the light permeable cover of a CSP and to easily adjust the distance between a lens and the front of the semiconductor chip within tolerance.

What is claimed is: 
     
         1 . A semiconductor module comprising:
 a semiconductor chip having an active region formed at a front thereof;   an intermediate layer having
 a front, 
 a back, 
 a side, and 
   an outer circumferential region at the front of the intermediate layer, the intermediate layer being disposed opposite to the front of the semiconductor chip such that the front of the semiconductor chip is covered by the back of the intermediate layer;   an enclosing portion formed of an insulation material, the enclosing portion having
 a first portion formed at the outer circumferential region, and 
 a second portion formed on the side of the intermediate layer, a tip end of the second portion extending to a side of the semiconductor chip; 
   a counterpart unit having
 a facing surface facing to the intermediate layer, and 
 a support part, fixed to the intermediate layer at the outer circumferential region; and 
   an adhesion layer on the semiconductor chip and having an opening formed at a central portion thereof,   wherein the adhesion layer, the intermediate layer, the first portion and the support part are stacked in that stated order on the semiconductor chip,   wherein a signal sent from the surface of the counterpart unit is sent to the semiconductor chip through the intermediate layer.   
     
     
         2 . The semiconductor module according to  claim 1 , wherein the active region is a light receiving region. 
     
     
         3 . The semiconductor module according to  claim 1 , wherein the intermediate layer is a light preamble cover. 
     
     
         4 . The semiconductor module according to  claim 1 , wherein the counterpart unit is a lens unit. 
     
     
         5 . The semiconductor module according to  claim 1 , wherein the enclosing portion is a light shielding layer. 
     
     
         6 . The semiconductor module according to  claim 1 , wherein the active region is a light receiving region. 
     
     
         7 . The semiconductor module according to  claim 1 , further comprising:
 an electrode pad, disposed at the front of the semiconductor chip, electrically connected to the active region;   a through hole formed at a position corresponding to the electrode pad and provided at the semiconductor ship such that the through hole extends from the front to a back of the semiconductor chip; and   a wire disposed in the through hole,   wherein the signal sent from the surface of the counter part unit is sent via the wire.   
     
     
         8 . The semiconductor module according to  claim 7 , further comprising:
 an external terminal, disposed at the back of the semiconductor chip, electrically connected to the electrode pad via the wire.   
     
     
         9 . The semiconductor module according to  claim 1 , wherein the side of the intermediate layer is entirely covered by the light shielding layer. 
     
     
         10 . The semiconductor module according to  claim 1 , wherein the intermediate layer is made of at least one of epoxy, acryl, silicone, and polyamide. 
     
     
         11 . The semiconductor module according to  claim 1 , wherein a thickness of the first portion of the enclosing portion is adjusted such that a distance between the front, of the semiconductor chip and a front of the first portion of the enclosing portion has a predetermined value. 
     
     
         12 . The semiconductor module according to  claim 1 , wherein the enclosing portion is disposed between the counterpart unit and the intermediate layer. 
     
     
         13 . The semiconductor module according to  claim 1 , wherein the intermediate layer is black or grey. 
     
     
         14 . The semiconductor module according to  claim 1 , wherein the counterpart unit is disposed so as not to touch the intermediate layer. 
     
     
         15 . The semiconductor module according to  claim 1 , wherein the semiconductor chip, the adhesion layer, the intermediate layer, and the counterpart unit are stacked at this stated order so that the module can be aggregated at one piece. 
     
     
         16 . A semiconductor module comprising:
 a semiconductor chip having a light receiving region formed at a front thereof;   a light preamble cover having
 a front, 
 a back, 
 a side, and 
 an outer circumferential region at the front of the light preamble cover, the light preamble cover being disposed opposite to the front of the semiconductor chip such that the front of the semiconductor chip is covered by the back of the light preamble cover, 
   a light shielding layer, formed of an insulation material, for blocking light from reaching the light receiving region, the light shielding layer having
 a first portion formed at the outer circumferential region, and 
 a second portion formed on the side of the light preamble cover, a tip end of the second portion extending to a side of the semiconductor chip; 
   a lens unit having
 a condensing part for condensing light onto the light receiving region via the light preamble cover, and 
 a support part, fixed on the first portion of the light shielding layer at the outer circumferential region, for supporting the condensing part; and 
   an adhesion layer on the semiconductor chip and having an opening formed at a central portion thereof,   wherein the adhesion layer, the light preamble cover, the first portion and the support part are stacked in that stated order on the semiconductor chip,   wherein the light shielding layer includes only the first and second portion so that the outer circumferential region at the front of the light preamble cover, the side of the light preamble cover, a side of the adhesion layer, and a portion of the side of the semiconductor chip are each directly covered by the light shielding layer such that no other part of the light preamble cover, the adhesion layer and the semiconductor chip is directly covered by the light shielding layer,   wherein a signal sent from the lens unit reaches to the semiconductor chip through the intermediate layer.   
     
     
         17 . The semiconductor module according to  claim 16 , wherein the signal is a light signal. 
     
     
         18 . The semiconductor module according to  claim 16 , wherein the light shielding layer is formed of at least one of epoxy, acryl, silicone, and polyamide. 
     
     
         19 . The semiconductor module according to  claim 16 , wherein the thickness of the first portion of the light shielding layer is adjusted such that a distance between the front, of the semiconductor chip and a front of the first portion of the light shielding layer has a predetermined value. 
     
     
         20 . The semiconductor module according to  claim 16 , wherein the first portion is only formed on the outer circumferential region.