US2014231018A1PendingUtilityA1

Plasma processing apparatus

55
Assignee: TOSHIBA KKPriority: Feb 15, 2013Filed: Feb 14, 2014Published: Aug 21, 2014
Est. expiryFeb 15, 2033(~6.6 yrs left)· nominal 20-yr term from priority
Inventors:Yoshifumi AokiMakoto SaitoHideo Eto
C23C 22/73H01J 37/32559H01J 37/32541
55
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Claims

Abstract

In one aspect there is provided a plasma processing apparatus including a substrate placing unit configured to be placed a substrate to be processed, and an upper electrode opposed to the substrate placing unit, wherein an outer portion of a main surface of the upper electrode opposed to the substrate placing unit has a mirror surface.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A plasma processing apparatus, comprising:
 a substrate placing unit configured to hold a substrate to be processed; and   an upper electrode opposed to the substrate placing unit;   wherein an outer portion of a main surface of the upper electrode opposed to the substrate placing unit has a mirror surface.   
     
     
         2 . The plasma processing apparatus of  claim 1 , wherein
 roughness of the outer portion of the main surface is not more than 100 nm.   
     
     
         3 . The plasma processing apparatus of  claim 1 , wherein
 the outer portion of the main surface has a convex shape.   
     
     
         4 . The plasma processing apparatus of  claim 3 , wherein
 a sidewall of the convex shape has a taper shape.   
     
     
         5 . The plasma processing apparatus of  claim 1 , wherein
 a back surface opposed to the main surface of the upper electrode has a mirror surface.   
     
     
         6 . The plasma processing apparatus of  claim 1 , wherein
 an outer portion of the back surface has a mirror surface.   
     
     
         7 . The plasma processing apparatus of  claim 6 , wherein
 roughness of the outer portion of the back surface is not more than 100 nm.

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