Nitride based semiconductor device and method for manufacturing the same

Abstract

Disclosed herein is a nitride based semiconductor device including: a base substrate; an epitaxial growth layer disposed on the base substrate and generating a 2-dimensional electron gas in an inner portion thereof; and an electrode structure disposed on the epitaxial growth layer, wherein the electrode structure includes: a gate electrode; a source electrode disposed at one side of the gate electrode; and a drain electrode disposed at the other side of the gate electrode and having an extension part extended to the inner portion of the epitaxial growth layer to contact the 2-dimensional electron gas.

1 - 8 . (canceled) 
     
     
         9 . A method for manufacturing a nitride based semiconductor device, comprising:
 preparing a base substrate;   forming an epitaxial growth layer on the base substrate, the epitaxial growth layer generating a 2-dimensional electron gas in an inner portion thereof; and   forming an electrode structure on the epitaxial growth layer,   wherein the forming of the electrode structure includes:
 forming a gate electrode; 
 forming a source electrode at one side of the gate electrode; and 
 forming a drain electrode at the other side of the gate electrode, the drain electrode having an extension part extended to the inner portion of the epitaxial growth layer to contact the 2-dimensional electron gas. 
   
     
     
         10 . The method for manufacturing a nitride based semiconductor device according to  claim 9 , wherein the forming of the drain electrode includes:
 forming a depression part exposing the 2-dimensional electron gas in a drain electrode forming region of the epitaxial growth layer; and   forming a metal layer filled in the depression part to form a Schottky electrode forming a Schottky contact with the epitaxial growth layer.   
     
     
         11 . The method for manufacturing a nitride based semiconductor device according to  claim 10 , wherein the forming of the depression part is made by performing a mesa process for separation between the nitride based semiconductor devices. 
     
     
         12 . The method for manufacturing a nitride based semiconductor device according to  claim 9 , wherein the preparing of the base substrate includes preparing at least any one of a silicon substrate, a silicon carbide substrate, and a sapphire substrate. 
     
     
         13 . The method for manufacturing a nitride based semiconductor device according to  claim 9 , wherein the forming of the epitaxial growth layer includes:
 growing a lower nitride layer by performing an epitaxial growth process on the base substrate using the base substrate as a seed layer; and   growing an upper nitride layer on the lower nitride layer using the lower nitride layer as a seed layer, the upper nitride layer having a wider energy band gap than that of the lower nitride layer.