US2014217435A1PendingUtilityA1

Light Emitting Diodes with Low Junction Temperature and Solid State Backlight Components Including Light Emitting Diodes with Low Junction Temperature

Assignee: CREE INCPriority: Jan 21, 2011Filed: Apr 14, 2014Published: Aug 7, 2014
Est. expiryJan 21, 2031(~4.5 yrs left)· nominal 20-yr term from priority
H10W 90/756H10W 90/754H10W 90/753H10W 90/734H10W 72/07554H10W 72/07352H10W 72/884H10W 72/547H10W 72/352H10W 72/321H10W 90/00H10H 20/857H10H 20/832H10H 29/14H01L 27/153
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Claims

Abstract

A light emitting diode chip a support layer having a first face and a second face opposite the first face, a diode region on the first face of the support layer, and a bond pad on the second face of the support layer. The bond pad includes a gold-tin structure having a weight percentage of tin of 50% or more. The light emitting diode chip may include a plurality of active regions that are connected in electrical series on the light emitting diode chip.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A light bar, comprising:
 an elongated support member; and   a plurality of light emitting diode chips mounted on the elongated support member, each of the light emitting diode chips comprising a support layer having a first face and a second face opposite the first face, a diode region on the first face of the support layer, and a die attach pad on the second face of the support layer, the die attach pad comprising a gold-tin structure having a weight percentage greater than 20%, wherein the light emitting diode chips are mounted to the elongated support member by their respective die attach pads.   
     
     
         2 . A light bar for backlighting a diode, comprising:
 an elongated support member; and   a plurality of light emitting diode devices mounted on the elongated support member, wherein each light emitting diode device comprises at least three isolated active regions connected in electrical series.   
     
     
         3 . The light bar of  claim 2  wherein each of the light emitting diode devices comprises a support layer having a first face and a second face opposite the first face, and a diode region on the first face of the support layer, wherein the diode region comprises a plurality of isolated active regions connected in electrical series. 
     
     
         4 . The light bar of  claim 2 , wherein each of the light emitting diode devices comprises a light emitting diode package including a submount and at least three singulated light emitting diodes on submount, an anode contact and a cathode contact, wherein the at least three singulated light emitting diodes are connected in electrical series between the anode contact and the cathode contact. 
     
     
         5 . The light bar of  claim 2 , wherein each of the light emitting diode devices comprises a light emitting diode package including a submount and a singulated light emitting diode die on submount, an anode contact and a cathode contact, wherein the singulated light emitting die includes a plurality of isolated active regions on a common substrate, wherein the plurality of isolated active regions are connected in electrical series between the anode contact and the cathode contact.

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