Chemical vapor deposition reactor

Abstract

A CVD reactor, such as a MOCVD reactor conducting metalorganic chemical vapor deposition of epitaxial layers, is provided. The CVD or MOCVD reactor generally comprises a flow flange assembly, adjustable proportional flow injector assembly, a chamber assembly, and a multi-segment center rotation shaft. The reactor provides a novel geometry to specific components that function to reduce the gas usage while also improving the performance of the deposition.

1 - 27 . (canceled) 
     
     
         28 . A chemical vapor deposition reactor comprising:
 a flow flange assembly;   a wafer carrier configured to support at least one substrate wafer; and   a center rotation shaft for rotating the wafer carrier, wherein the center rotation shaft comprise an upper shaft segment having a flange at a proximal end located adjacent to the wafer carrier, wherein a bottom surface of the wafer carrier rests on the flange of the upper shaft segment, and further wherein the upper shaft segment is fabricated from a material adapted for induction heating.   
     
     
         29 . The chemical vapor deposition reactor according to  claim 28 , wherein the flow flange assembly comprises an upper flow guide having a curved or flared profile. 
     
     
         30 . The chemical vapor deposition reactor according to  claim 28 , further comprising a lower flow guide surrounding the wafer carrier, wherein the lower flow guide, generally, has a sloped shape, a conical shape or a frustoconical shape. 
     
     
         31 . The chemical vapor deposition reactor according to  claim 28 , wherein the flow flange assembly comprises an upper flow guide connected to a main flange body, wherein a first fluid gap is positioned between the upper flow guide and the main flange body. 
     
     
         32 . The chemical vapor deposition reactor according to  claim 31 , wherein a second gap located between the outward facing surface of the wafer carrier and an upper surface of the upper flow guide is about  1  inch or less. 
     
     
         33 . The chemical vapor deposition reactor according to  claim 28 , wherein the upper shaft segment is fabricated from a material having a lower thermal conductivity than remaining segments of the center rotation shaft. 
     
     
         34 . The chemical vapor deposition reactor according to  claim 28 , further comprising:
 a radiant heat source.   
     
     
         35 . The chemical vapor deposition reactor according to  claim 28 , further comprising:
 a reactor, wherein the center rotation shaft has two or more segments that are used in the reactor.   
     
     
         36 . The chemical vapor deposition reactor according to  claim 28 , wherein the center rotation shaft extends downward from a center of a bottom surface of the wafer carrier. 
     
     
         37 . The chemical vapor deposition reactor according to  claim 28 , wherein the center rotation shaft comprises at least two shaft segments made from different materials. 
     
     
         38 . The chemical vapor deposition reactor according to  claim 37 , wherein the upper shaft segment is made from graphite. 
     
     
         39 . The chemical vapor deposition reactor of  claim 37 , wherein a lower shaft segment of the center rotation shaft is made from sapphire. 
     
     
         40 . The chemical vapor deposition reactor of  claim 28 , wherein the center rotation shaft further comprises a lower shaft segment, wherein the at least one shaft segment, selected from the upper and lower shaft segments, has a substantially lower thermal conductivity than remaining shaft segments of the center rotation shaft. 
     
     
         41 . The chemical vapor deposition reactor of  claim 40 , wherein the upper shaft segment is fabricated from a high thermal conductivity material and one or more of the remaining shaft segments of the center rotation shaft is fabricated from a material having a lower thermal conductivity than the upper shaft segment.