US2014209981A1PendingUtilityA1

Semiconductor Device

Assignee: YOSHIMURA MASAKIPriority: Nov 20, 2009Filed: Apr 3, 2014Published: Jul 31, 2014
Est. expiryNov 20, 2029(~3.3 yrs left)· nominal 20-yr term from priority
H10D 84/83H10D 89/10H01L 27/088
46
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Claims

Abstract

Disclosed is a semiconductor device including transistors B on an output side of a current mirror, arranged uniformly in a surrounding area of a transistor A on an input side of the current mirror. The transistors B are arranged at equal distances, adjacently to the transistor A, on both sides of the transistor A.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A semiconductor device comprising:
 a first transistor comprising a gate electrode and source electrode directly coupled to a first node to form a first current source; and   a plurality of second transistors forming one second current source or a plurality of second current sources, each generating a current associated with a current from said first current source, wherein   each of the plurality of second transistors comprises a gate electrode and source electrode directly coupled to the first node, and   wherein the first transistor is sandwiched within the plurality of second transistors.

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