Pattern forming method, chemical amplification resist composition and resist film

Abstract

A pattern forming method includes: (i) forming a film from a chemical amplification resist composition that contains (A) a resin, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and (C) a tertiary alcohol; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent.

1 . A chemical amplification resist composition, comprising:
 (A) a resin;   (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and   (C) a tertiary alcohol,   wherein the tertiary alcohol (C) is not a polymer or oligomer obtained by cleaving an unsaturated bond of a compound having an unsaturated bond with use of an initiator and expanding the bond through a chain reaction.   
     
     
         2 . The chemical amplification resist composition according to  claim 1 ,
 wherein the tertiary alcohol (C) is a compound represented by the following formula (C1):   
       
         
           
           
               
               
           
         
         wherein each of R 1 , R 2  and R 3  independently represents an alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group or an aryl group, and two or more of R 1 , R 2  and R 3  may combine with each other to form a ring; and 
         the compound may have a structure containing two or more structures represented by formula (C1) where any one of R 1  to R 3  in a structure represented by formula (C1) is bonded to any one of R 1  to R 3  in another structure represented by formula (C1), and 
         a ratio of an aromatic group-containing repeating unit in the resin (A) is 5 mol % or less. 
       
     
     
         3 . The chemical amplification resist composition according to  claim 1 ,
 wherein the tertiary alcohol is not a polymer or an oligomer and has a molecular weight of 120 to 500, and   a ratio of an aromatic group-containing repeating unit in the resin (A) is 5 mol % or less.   
     
     
         4 . The chemical amplification resist composition according to  claim 1 ,
 wherein the tertiary alcohol (C) is a compound represented by the following formula (C1):   
       
         
           
           
               
               
           
         
         wherein each of R 1 , R 2  and R 3  independently represents an alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group or an aryl group, and two or more of R 1 , R 2  and R 3  may combine with each other to form a ring; and 
         the compound may have a structure containing two or more structures represented by formula (C1) where any one of R 1  to R 3  in a structure represented by formula (C1) is bonded to any one of R 1  to R 3  in another structure represented by formula (C1), and 
         all repeating units of the resin (A) are composed of a (meth)acrylate-based repeating unit. 
       
     
     
         5 . The chemical amplification resist composition according to  claim 1 ,
 wherein the tertiary alcohol is not a polymer or an oligomer and has a molecular weight of 120 to 500, and   all repeating units of the resin (A) are composed of a (meth)acrylate-based repeating unit.   
     
     
         6 . The chemical amplification resist composition according to  claim 2 , further comprising a hydrophobic resin. 
     
     
         7 . The chemical amplification resist composition according to  claim 3 , further comprising a hydrophobic resin. 
     
     
         8 . The chemical amplification resist composition according to  claim 4 , further comprising a hydrophobic resin. 
     
     
         9 . The chemical amplification resist composition according to  claim 5 , further comprising a hydrophobic resin.