Semiconductor light emitting device and method for manufacturing same

Abstract

According to an embodiment, a semiconductor light emitting device includes a light emitting body including a semiconductor light emitting layer, a support substrate supporting the light emitting body, and a bonding layer provided between the light emitting body and the support substrate, the bonding layer bonding the light emitting body and the support substrate together. The device also includes a first barrier metal layer provided between the light emitting body and the bonding layer, and an electrode provided between the light emitting body and the first barrier metal layer. The first barrier layer includes a first layer made of nickel and a second layer made of a metal having a smaller linear expansion coefficient than nickel, and the first layer and the second layer are alternately disposed in a multiple-layer structure. The electrode is electrically connected to the light emitting body.

1 - 20 . (canceled) 
     
     
         21 . A semiconductor light emitting device comprising:
 a light emitting body including a semiconductor light emitting layer;   a substrate;   a bonding layer between the light emitting body and the substrate, the bonding layer bonding the light emitting body to the substrate;   a first barrier metal layer between the light emitting body and the bonding layer, the first barrier metal layer including at least one of a first layer made of a first metal and at least one of a second layer made of a second metal having a linear expansion coefficient that is less than the first metal; and   an electrode between the light emitting body and the first barrier metal layer, the electrode comprising a metal having a linear expansion coefficient between that of the first metal and that of the second metal.   
     
     
         22 . The device according to  claim 21 , wherein the electrode includes silver (Ag). 
     
     
         23 . The device according to  claim 21 , wherein
 the linear expansion coefficient of the metal of the electrode is closer to the linear expansion coefficient of the first metal than the linear expansion coefficient of the second metal.   
     
     
         24 . The device according to  claim 21 , wherein the first metal and the second metal each comprise at least one metal selected from titanium (Ti), platinum (Pt), tantalum (Ta), and tungsten (W). 
     
     
         25 . The device according to  claim 21 , wherein the first barrier metal layer alternatively includes three or more of the first layer and three or more of the second layer. 
     
     
         26 . The device according to  claim 21 , wherein the second layer is provided between the electrode and a first layer. 
     
     
         27 . The device according to  claim 21 , wherein the first layer is provided between the bonding layer and a second layer. 
     
     
         28 . The device according to  claim 21 , wherein a thickness of each of the first layer and the second layer is not less than 50 nm and not more than 500 nm. 
     
     
         29 . The device according to  claim 21 , wherein the bonding layer comprises at least one of gold (Au) and tin (Sn). 
     
     
         30 . The device according to  claim 21 , wherein
 the bonding layer comprises Au and Sn, and   a portion of the bonding layer nearer the first barrier metal layer than the substrate has a smaller ratio of Sn to Au than a portion of the bonding layer nearer to the substrate than the first barrier metal layer.   
     
     
         31 . The device according to  claim 21 , wherein
 the light emitting body includes a p-type GaN layer and an n-type GaN layer, and   the semiconductor light emitting layer is between the p-type GaN layer and the n-type GaN layer.   
     
     
         32 . The device according to  claim 21 , wherein the electrode is electrically connected to the p-type GaN layer. 
     
     
         33 . The device according to  claim 21 , wherein the electrode includes a plurality of portions disposed between the light emitting body and the first barrier metal layer, and each of the portions is separated from one another along a direction substantially parallel to a plane of the substrate. 
     
     
         34 . The device according to  claim 33 , wherein at least one portion among the plurality of portions of the electrode has an end portion inclined at an angle that is less than perpendicular with respect to the plane of the substrate such that a width of the at least one portion decreases in a direction from the light emitting body to the first barrier metal layer.