Semiconductor device and a method of manufacturing the same

Abstract

For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.

1 - 18 . (canceled) 
     
     
         19 . A method for manufacturing a semiconductor integrated circuit device, comprising steps of:
 (a) forming a first interconnect including copper as a main component over a semiconductor substrate;   (b) forming a first insulating film on a surface of the first interconnect;   (c) forming a second insulating film on a surface of the first insulating film;   (d) forming a first interlayer insulating film on a surface of the second insulating film;   (e) forming a second interconnect including copper as a main component over the first interlayer insulating film;   (f) forming a third insulating film on a surface of the second interconnect; and   (g) forming a second interlayer insulating film on a surface of the third insulating film,   wherein the first insulating film is formed between the first interconnect and the second insulating film,   wherein the second insulating film is formed between the first insulating film and the first interlayer insulating film,   wherein the third insulating film is formed between the second interconnect and the second interlayer insulating film,   wherein thicknesses of the first and second insulating films are smaller than a thickness of the first interlayer insulating film, and   wherein a thickness of the third insulating film is smaller than a thickness of the second interlayer insulating film.   
     
     
         20 . A method for manufacturing a semiconductor integrated circuit device according to the  claim 19 ,
 wherein the thickness of the first interlayer insulating film is smaller than the thickness of the second interlayer insulating film.   
     
     
         21 . A method for manufacturing a semiconductor integrated circuit device according to the  claim 20 ,
 wherein a thickness of the first interconnect is smaller than a thickness of the second interconnect.   
     
     
         22 . A method for manufacturing a semiconductor integrated circuit device according to the  claim 20 ,
 wherein the first interlayer insulating film includes Si, O and C,   wherein the second interlayer insulating film includes a silicon oxide film or a fluorinated silicon oxide film.   
     
     
         23 . A method for manufacturing a semiconductor integrated circuit device according to the  claim 19 ,
 wherein a nitrogen concentration of the first insulating film is larger than a nitrogen concentration of the second insulating film.   
     
     
         24 . A method for manufacturing a semiconductor integrated circuit device according to the  claim 23 ,
 wherein the first and third insulating films include nitrogen, and   wherein the second insulating film does not include nitrogen.   
     
     
         25 . A method for manufacturing a semiconductor integrated circuit device according to the  claim 24 ,
 wherein the first insulating film includes Si, C and N,   wherein the second insulating film includes Si, C and O, and   wherein the third insulating film includes Si, C and N.   
     
     
         26 . A method for manufacturing a semiconductor integrated circuit device according to the  claim 19 ,
 wherein the third insulating film is made of a same material as the first insulating film, and   wherein the second insulating film is made of a different material from the first and third insulating films.   
     
     
         27 . A method for manufacturing a semiconductor integrated circuit device according to the  claim 26 ,
 wherein the first insulating film includes Si, C and N,   wherein the second insulating film includes Si, C and O, and   wherein the third insulating film includes Si, C and N.