Pad structures and wiring structures in a vertical type semiconductor device

Abstract

Step shape pad structure and wiring structure in vertical type semiconductor device are include a first conductive line having a first line shape and including first pad regions at an upper surface of an edge portion, and a second conductive line having s second line shape and being spaced apart from the first conductive line and provided on the first conductive line. An end portion of the first conductive line is extended to a first position. Second pad regions are included on an upper surface of an edge portion of the second conductive line. An end portion of the second conductive line is extended to the first position. The second conductive line includes a dent portion at a facing portion to the first pad regions in a vertical direction to expose the first pad regions. The pad structure may be used in a vertical type nonvolatile memory device.

What is claimed is: 
     
         1 . A pad structure of a vertical type semiconductor device, comprising:
 a first conductive line having a first line shape and including first pad regions at an upper surface of an edge portion, an end portion of the first conductive line being extended to a first position; and   a second conductive line having a second line shape and being spaced apart from the first conductive line, the second conductive line on the first conductive line, second pad regions being on an upper surface of an edge portion of the second conductive line, an end portion of the second conductive line being extended to the first position, and the second conductive line defining a dent portion exposing a portion of the first pad regions in a vertical direction.   
     
     
         2 . The pad structure of  claim 1 , wherein the first and second conductive lines form a stepped layer, and
 further comprising:   a plurality of the stepped layers being vertically stacked in a first direction.   
     
     
         3 . The pad structure of  claim 2 , wherein a length of an upper stepped layer is shorter than a length of an underlying stepped layer in the stacked stepped layers. 
     
     
         4 . The pad structure of  claim 1 , wherein the dent portion in the second conductive line has a recess or an aperture. 
     
     
         5 . A wiring structure of a vertical type semiconductor device, comprising:
 a first stepped layer structure including,
 a first word line and a second word line spaced apart from each other, 
 the first word line and the second word line being stacked one on another in a first direction which is a vertical direction, 
 the first and second word lines having a line shape extending in a second direction, 
 the second word line defining a first dent portion at an edge portion, and 
 the first dent portion exposing at least a portion of an upper surface of the first word line; 
   a second stepped layer structure on the first stepped layer structure, the second stepped layer structure including,
 a third word line and a fourth word line, 
 the third and fourth word line having the line shape extending in the second direction, 
 the fourth word line defining a second dent portion at an edge portion, 
 the second dent portion exposing at least a portion of an upper surface of the third word line, and 
 a length of the second stepped layer structure being shorter than a length of the first stepped layer structure; 
   a first contact plug contacting the upper surface of the first word line exposed through the first dent portion;   a second contact plug contacting an upper surface of the second word line;   a third contact plug contacting the upper surface of the third word line exposed through second the dent portion; and   a fourth contact plug contacting an upper surface of the fourth word line.   
     
     
         6 . The wiring structure of  claim 5 , further comprising:
 third to n-th stepped layer structures (wherein n is a natural number greater than 2) vertically stacked in the first direction on the second stepped layer structure,   the third to n-th stepped layer structures each having a step shape,   the third to n-th stepped layer structures each including an upper stepped layer and a lower stepped layer, and   a length of the upper stepped layer being shorter than a length of the lower stepped layer.   
     
     
         7 . The wiring structure of  claim 5 , further comprising:
 a plurality of step shape structures, each including the first stepped layer structure stacked on the second stepped layer structure,   the plurality of the step shape structures being parallel to each other and extending in the second direction.   
     
     
         8 . The wiring structure of  claim 7 , further comprising:
 first to fourth wiring lines being electrically coupled to the first to fourth contact plugs, respectively.   
     
     
         9 . The wiring structure of  claim 5 , wherein
 the first and second contact plugs are on the first stepped layer structure in a first zigzag pattern, and   the third and fourth contact plugs are on the second stepped layer structure in a second zigzag pattern.   
     
     
         10 . The wiring structure of  claim 5 , wherein
 the first and second contact plugs are in a row on the first stepped layer, and   the third and fourth contact plugs are in a row on the second stepped layer.   
     
     
         11 . The wiring structure of  claim 10 , further comprising:
 first and second wiring lines at both sides of the first and second contact plugs;   a first pad pattern connecting the first wiring line and the first contact plug;   a second pad pattern connecting the second wiring line and the second contact plug;   third and fourth wiring lines at both sides of the third and fourth contact plugs;   a third pad pattern connecting the third wiring line and the third contact plug; and   a fourth pad pattern connecting the fourth wiring line and the fourth contact plug.   
     
     
         12 . The wiring structure of  claim 5 , wherein the first and second dent portions of the second and fourth word lines have a recess or an aperture. 
     
     
         13 . A wiring structure of a vertical type semiconductor device, comprising:
 a first stepped layer structure including,
 first to n-th word lines including a stack of n layers (wherein n is a natural number greater than 1), 
 the first to n-th word lines being spaced apart from each other and stacked one on another in a first direction that is a vertical direction, 
 the first to n-th word lines extending in a second direction, and 
 the second to n-th word lines defining first dent portions exposing a portion of an edge portion of a first underlying word line; 
   a second stepped layer structure over the first stepped layer structure, the second stepped layer structure having a stepped shape, and the stepped shape having a gradually decreasing edge length from a lower portion to an upper portion, the second stepped layer structure including,
 first to m-th word lines (wherein m is a natural number greater than 2) including a stack of m layers spaced apart from each other in the vertical direction, 
 the first to m-th word lines extending in the second direction, and 
 the second to m-th word lines defining second dent portions exposing a portion of an edge portion of a second underlying word line; 
   first contact plugs respectively contacting an upper surface of the word lines exposed through the first dent portions and the second dent portions; and   second contact plugs respectively contacting an upper surface of an uppermost word line in each of the first and second stepped layer structures.   
     
     
         14 . The wiring structure of  claim 13 , further comprising:
 a plurality of step shape structures including the first and second stepped layer structures, and   the plurality of the step shape structures being parallel to each other in the first direction and extending in the second direction.   
     
     
         15 . The wiring structure of  claim 13 , further comprising:
 wiring lines electrically connecting the first contact plugs contacting the word lines formed at a same level layer with the second contact plugs contacting the word lines formed in the same level layer, respectively.   
     
     
         16 . A wiring structure, comprising:
 a stack structure including,
 a plurality of stacked layers spaced apart from each other in a first direction, 
 each of the stacked layers extending in a second direction substantially perpendicular to the first direction, 
 each of the stacked layers including a first conductive layer stacked on a second conductive layer, 
 the stacked layers being staggered in the second direction so as to expose end portions of the first and second conductive layers, and 
 the first conductive layer having an edge portion partially exposing an edge portion of the second conductive layer; and 
   contact plugs extending in the first direction, the contact plugs contacting the exposed edge portions of the first and second conductive layers, respectively.   
     
     
         17 . The wiring structure of  claim 16 , wherein
 the edge portion of the first conductive layer has at least one protruding portion extending in the second direction, and   a length of the edge portion of the second conductive layer exposed by the edge portion of the first conductive layer is equal to or greater than a length of the at least one protruding portion.   
     
     
         18 . The wiring structure of  claim 17 , wherein
 the edge portion of the first conductive layer has at least two protruding portions, and   the at least two protruding portions are spaced apart from each other.   
     
     
         19 . The wiring structure of  claim 16 , wherein
 the edge portion of the first conductive layer has an enclosed opening partially exposing the edge portion of the second conductive layer.   
     
     
         20 . The wiring structure of  claim 16 , wherein the contact plugs are arranged either along a same line or in a zigzag pattern in a third direction, the third direction being substantially perpendicular to the first and second directions.