US2014193573A1PendingUtilityA1

Apparatus of forming electroconductive substance and method of forming the same

Assignee: FUJIKURA LTDPriority: Sep 13, 2011Filed: Mar 12, 2014Published: Jul 10, 2014
Est. expirySep 13, 2031(~5.1 yrs left)· nominal 20-yr term from priority
H10P 14/40H10W 20/023H10W 20/0261C23C 18/1603C23C 18/1619C23C 18/40C23C 18/1685C23C 18/31
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Claims

Abstract

An apparatus forms an electroconductive substance in micro holes, the apparatus introduces a fluid, that includes at least a metal complex dissolved in a supercritical fluid or a subcritical fluid, into a reaction chamber including a first space and a second space, allows a planar substrate to be disposed in the fluid that continuously moves in a specific direction in the reaction chamber. A second surface of the substrate is vertical to the specific direction in which the fluid that is introduced into the first space moves; the substrate is supported throughout the entire first surface so that the fluid travels in the micro holes of the substrate from the second surface toward the first space of the substrate; and a support member including a fine communication hole through which the fluid passes toward the second space is disposed.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An apparatus of forming an electroconductive substance comprising:
 a reaction chamber including a first space into which a fluid is introduced and a second space through which the fluid is discharged, the fluid including at least a metal complex dissolved in a supercritical fluid or a subcritical fluid; and   a support member which supports a planar substrate which is disposed in the fluid that continuously moves in a specific direction in the reaction chamber, and includes a first surface, a second surface, and micro holes, the support member supporting the substrate throughout an entire first surface so that the second surface of the substrate is vertical to the specific direction in which the fluid that is introduced into the first space moves and so that the fluid travels in the micro holes of the substrate from the second surface toward the first surface of the substrate, and includes fine communication holes through which the fluid passes toward the second space.   
     
     
         2 . The apparatus of forming an electroconductive substance according to  claim 1 , further comprising:
 an introduction portion which projects in the first space of the reaction chamber, includes an introduction opening configured to be located close to the second surface of the substrate, and introduces the fluid into the reaction chamber.   
     
     
         3 . The apparatus of forming an electroconductive substance according to  claim 1 , further comprising:
 an introduction portion which projects in the first space of the reaction chamber, includes a plurality of introduction openings configured to be located close to the second surface of the substrate, and introduces the fluid into the reaction chamber.   
     
     
         4 . A method of forming an electroconductive substance, comprising:
 preparing: a reaction chamber including a first space into which a fluid is introduced and a second space through which the fluid is discharged; a planar substrate which is disposed in the fluid that continuously moves in a specific direction in the reaction chamber, and includes a first surface, a second surface, and micro holes; and a support member which supports the first surface of the substrate, the fluid including at least a metal complex dissolved in a supercritical fluid or a subcritical fluid;   disposing the support member so that the second surface of the substrate is vertical to the specific direction in which the fluid that is introduced into the first space moves and so that the fluid travels in the micro holes of the substrate from the second surface toward the first surface of the substrate; and   allowing the fluid to transfer from the first space to the second space; and   forming an electroconductive substance on inner walls of the micro holes provided in the substrate.   
     
     
         5 . The method of forming an electroconductive substance according to  claim 4 ,
 wherein a semiconductor substrate or a glass substrate is used as the substrate.   
     
     
         6 . The method of forming an electroconductive substance according to  claim 4 ,
 wherein the fluid contains a reducing agent dissolved therein.   
     
     
         7 . An apparatus of forming an electroconductive substance comprising:
 a reaction chamber into which a fluid is introduced, the fluid including at least a metal complex dissolved in a supercritical fluid or a subcritical fluid, wherein   a planar substrate which is disposed in the fluid that continuously moves in a specific direction in the reaction chamber, and includes micro holes, and the substrate is disposed so that the fluid moves along both surfaces of the substrate.   
     
     
         8 . The apparatus of forming an electroconductive substance according to  claim 7 ,
 wherein the substrate is disposed so that both surfaces of the substrate are parallel to the specific direction.   
     
     
         9 . The apparatus of forming an electroconductive substance according to  claim 7 ,
 wherein the substrate is disposed so that both surfaces of the substrate are not parallel to the specific direction.   
     
     
         10 . The apparatus of forming an electroconductive substance according to  claim 7 , further comprising:
 a holding portion which holds an angle formed by both surfaces of the substrate with respect to the specific direction, and is provided in the reaction chamber.   
     
     
         11 . A method of forming an electroconductive substance, comprising:
 preparing: a reaction chamber into which a fluid is introduced; and a planar substrate which is disposed in the fluid that continuously moves in a specific direction in the reaction chamber are prepared, the fluid including at least a metal complex dissolved in a supercritical fluid or a subcritical fluid; and   allowing the fluid to transfer along both surfaces of the substrate; and   forming an electroconductive substance on inner walls of the micro holes provided in the substrate.   
     
     
         12 . The method of forming an electroconductive substance according to  claim 11 ,
 wherein a semiconductor substrate or a glass substrate is used as the substrate.   
     
     
         13 . The method of forming an electroconductive substance according to  claim 11 ,
 wherein the fluid contains a reducing agent dissolved therein.   
     
     
         14 . An apparatus of forming an electroconductive substance comprising:
 a reaction chamber including a first space into which a fluid is introduced and a second space through which the fluid is discharged, the fluid including at least a metal complex dissolved in a supercritical fluid or a subcritical fluid; and   a support member which supports a planar substrate which is disposed in the fluid that continuously moves in a specific direction in the reaction chamber, and includes a first surface, a second surface, and micro holes, the support member supporting the first surface of the substrate so that the second surface of the substrate is vertical to the specific direction in which the fluid that is introduced into the first space moves and so that the fluid travels in the micro holes of the substrate from the second surface toward the first surface of the substrate.   
     
     
         15 . The apparatus of forming an electroconductive substance according to  claim 14 , further comprising:
 an introduction portion which projects in the first space of the reaction chamber, includes an introduction opening configured to be located close to the second surface of the substrate, and introduces the fluid into the reaction chamber.   
     
     
         16 . The apparatus of forming an electroconductive substance according to  claim 14 , further comprising:
 an introduction portion which projects in the first space of the reaction chamber, includes a plurality of introduction openings configured to be located close to the second surface of the substrate, and introduces the fluid into the reaction chamber.   
     
     
         17 . An apparatus of forming an electroconductive substance comprising:
 a reaction chamber including a first space into which a fluid is introduced and a second space through which the fluid is discharged, the fluid including at least a metal complex dissolved in a supercritical fluid or a subcritical fluid; and   a support member which supports a planar substrate which is disposed in the fluid that continuously moves in a specific direction in the reaction chamber, and includes a first surface, a second surface, and micro holes, the support member supporting the first surface of the substrate so that the second surface of the substrate is vertical to the specific direction in which the fluid that is introduced into the first space moves and so that the fluid travels in the micro holes of the substrate from the second surface toward the first surface of the substrate, and includes a guide path through which the fluid passes toward the second space and which is provided around the substrate.   
     
     
         18 . The apparatus of forming an electroconductive substance according to  claim 17 , further comprising:
 an introduction portion which projects in the first space of the reaction chamber, includes an introduction opening configured to be located close to the second surface of the substrate, and introduces the fluid into the reaction chamber.   
     
     
         19 . The apparatus of forming an electroconductive substance according to  claim 17 , further comprising:
 an introduction portion which projects in the first space of the reaction chamber, includes a plurality of introduction openings configured to be located close to the second surface of the substrate, and introduces the fluid into the reaction chamber.

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