One-dimensional titanium nanostructure and method for fabricating the same

Abstract

A one-dimensional titanium nanostructure and a method for fabricating the same are provided. A titanium metal reacts with titanium tetrachloride to form the one-dimensional titanium nanostructure on a heat-resistant substrate in a CVD method and under a reaction condition of a reaction temperature of 300-900° C., a deposition temperature of 200-850° C., a flow rate of the carrier gas of 0.1-50 sccm and a reaction time of 5-60 hours. The titanium nanostructure includes titanium nanowires, titanium nanobelts, flower-shaped titanium nanowires, titanium nanorods, titanium nanotubes, and titanium-titanium dioxide core-shell structures. The titanium nanostructure can be densely and uniformly grown on the heat-resistant substrate. The present invention neither uses a template nor uses the complicated photolithographic process, solution preparation process, and mixing-coating process. Therefore, the process scale-up, cost down, and the simplified production process are achieved.

What claimed is: 
     
         1 . A method for fabricating a one-dimensional titanium nanostructure, comprising steps:
 placing a heat-resistant substrate and a titanium metal in a CVD (Chemical Vapor Deposition) reaction chamber; and   using a carrier gas to transport titanium tetrachloride into said CVD reaction chamber, undertaking a reaction of said titanium metal and said titanium tetrachloride to generate titanium subchloride, and letting said titanium subchloride thermolyze to form a one-dimensional titanium nanostructure on said heat-resistant substrate, under a reaction condition of a reaction temperature of 300-900° C., a deposition temperature of 200-850° C., a flow rate of a carrier gas of 0.1-50 sccm and a reaction time of 5-60 hours.   
     
     
         2 . The method for fabricating a one-dimensional titanium nanostructure according to  claim 1 , wherein said heat-resistant substrate is made of graphite, and said carrier gas is nitrogen, and wherein said titanium metal reacts with said titanium tetrachloride at a reaction temperature of 500-900° C., and said one-dimensional titanium nanostructure deposits on said heat-resistant substrate at a deposition temperature of 500-850° C., and wherein said flow rate of said carrier gas is 0.1-10 sccm, and said reaction time is 8-30 hours, and wherein said one-dimensional titanium nanostructure is a titanium nanowire having a diameter of 20-50 nm and a length of 2-50 μm, and wherein said titanium nanowire is a monocrystalline titanium nanowire or a polycrystalline titanium nanowire. 
     
     
         3 . The method for fabricating a one-dimensional titanium nanostructure according to  claim 2 , wherein said one-dimensional titanium nanostructure deposits on said heat-resistant substrate at a deposition temperature of 800-850° C. 
     
     
         4 . The method for fabricating a one-dimensional titanium nanostructure according to  claim 2 , wherein said monocrystalline titanium nanowire has an FCC lattice structure. 
     
     
         5 . The method for fabricating a one-dimensional titanium nanostructure according to  claim 1 , wherein said heat-resistant substrate is made of graphite, and said carrier gas is nitrogen, and wherein said titanium metal reacts with said titanium tetrachloride at a reaction temperature of 500-900° C., and said one-dimensional titanium nanostructure deposits on said heat-resistant substrate at a deposition temperature of 475-825° C., and wherein said flow rate of said carrier gas is 0.1-10 sccm, and said reaction time is 5-30 hours, and wherein said one-dimensional titanium nanostructure is a titanium nanobelt having a diameter of 20-150 nm and a length of 1-50 μm, and wherein said titanium nanobelt is a monocrystalline titanium nanobelt or a polycrystalline titanium nanobelt. 
     
     
         6 . The method for fabricating a one-dimensional titanium nanostructure according to  claim 5 , wherein said one-dimensional titanium nanostructure deposits on said heat-resistant substrate at a deposition temperature of 775-825° C. 
     
     
         7 . The method for fabricating a one-dimensional titanium nanostructure according to  claim 5 , wherein said monocrystalline titanium nanobelt has an FCC lattice structure. 
     
     
         8 . The method for fabricating a one-dimensional titanium nanostructure according to  claim 1 , wherein said heat-resistant substrate is made of graphite, a surface of said heat-resistant substrate is roughened to at least have a roughness of 20 nm, and wherein said carrier gas is nitrogen, and wherein said titanium metal reacts with said titanium tetrachloride at a reaction temperature of 700-900° C., and said one-dimensional titanium nanostructure deposits on said heat-resistant substrate at a deposition temperature of 475-825° C., and wherein said flow rate of said carrier gas is 10-20 sccm, and said reaction time is 15-60 hours, whereafter supply of said titanium tetrachloride to said CVD reaction chamber is switched off, and heating is maintained for 3-10 hours, whereafter said CVD reaction chamber is cooled down to an ambient temperature, and said titanium tetrachloride remaining in said CVD reaction chamber is removed, whereafter said one-dimensional titanium nanostructure is taken out of said CVD reaction chamber, whereby said one-dimensional titanium nanostructure is a flower-shaped titanium nanowire having a diameter of 30-100 nm and a length of 2-9 μm, and said flower-shaped titanium nanowire is a monocrystalline flower-shaped titanium nanowire or a polycrystalline flower-shaped titanium nanowire. 
     
     
         9 . The method for fabricating a one-dimensional titanium nanostructure according to  claim 8 , wherein said one-dimensional titanium nanostructure deposits on said heat-resistant substrate at a deposition temperature of 600-800° C. 
     
     
         10 . The method for fabricating a one-dimensional titanium nanostructure according to  claim 8 , wherein monocrystalline flower-shaped titanium nanowire has an FCC lattice structure. 
     
     
         11 . The method for fabricating a one-dimensional titanium nanostructure according to  claim 1 , wherein said heat-resistant substrate is made of graphite, and said carrier gas is nitrogen, and wherein said titanium metal reacts with said titanium tetrachloride at a reaction temperature of 700-900° C., and said one-dimensional titanium nanostructure deposits on said heat-resistant substrate at a deposition temperature of 475-825° C., and wherein said flow rate of said carrier gas is 10-20 sccm, and said reaction time is 15-60 hours, whereafter supply of said titanium tetrachloride to said CVD reaction chamber is switched off, and heating is maintained for 3-10 hours, whereafter said CVD reaction chamber is cooled down to an ambient temperature, and said titanium tetrachloride remaining in said CVD reaction chamber is removed, whereafter said one-dimensional titanium nanostructure is taken out of said CVD reaction chamber, whereby said one-dimensional titanium nanostructure is a titanium nanorod having a diameter of 30-100 nm and a length of 2-9 μm, and said titanium nanorod is a monocrystalline titanium nanorod or a polycrystalline titanium nanorod. 
     
     
         12 . The method for fabricating a one-dimensional titanium nanostructure according to  claim 11 , wherein said one-dimensional titanium nanostructure deposits on said heat-resistant substrate at a deposition temperature of 600-800° C. 
     
     
         13 . The method for fabricating a one-dimensional titanium nanostructure according to  claim 11 , wherein monocrystalline titanium nanorod has an FCC lattice structure. 
     
     
         14 . The method for fabricating a one-dimensional titanium nanostructure according to  claim 1 , wherein said heat-resistant substrate is made of graphite, and said carrier gas is nitrogen, and wherein said titanium metal reacts with said titanium tetrachloride at a reaction temperature of 700-900° C., and said one-dimensional titanium nanostructure deposits on said heat-resistant substrate at a deposition temperature of 475-825° C., and wherein said flow rate of said carrier gas is 10-20 sccm, and said reaction time is 15-60 hours, whereafter supply of said titanium tetrachloride to said CVD reaction chamber is switched off, and said CVD reaction chamber is cooled down to an ambient temperature, whereafter said one-dimensional titanium nanostructure is taken out of said CVD reaction chamber, whereby said one-dimensional titanium nanostructure is a titanium-titanium dioxide core-shell structure having a titanium core and a titanium dioxide shell, and said titanium core has a diameter of 20-100 nm and a length of 2-10 μm, and said titanium dioxide shell has a thickness of 5-50 nm; said titanium core is a monocrystalline titanium core or a polycrystalline titanium core; said titanium dioxide shell is a monocrystalline titanium dioxide shell or a polycrystalline titanium dioxide shell. 
     
     
         15 . The method for fabricating a one-dimensional titanium nanostructure according to  claim 14 , wherein said one-dimensional titanium nanostructure deposits on said heat-resistant substrate at a deposition temperature of 600-800° C. 
     
     
         16 . The method for fabricating a one-dimensional titanium nanostructure according to  claim 14 , wherein said monocrystalline titanium core has an FCC lattice structure, and said titanium dioxide shell is Anatase titanium dioxide, Rutile titanium dioxide or Brookite titanium dioxide. 
     
     
         17 . The method for fabricating a one-dimensional titanium nanostructure according to  claim 1 , wherein said heat-resistant substrate is made of graphite, and said carrier gas is nitrogen, and wherein said titanium metal reacts with said titanium tetrachloride at a reaction temperature of 700-900° C., and said one-dimensional titanium nanostructure deposits on said heat-resistant substrate at a deposition temperature of 475-800° C., and wherein said flow rate of said carrier gas is 10-50 sccm, and said reaction time is 15-60 hours, whereafter supply of said titanium tetrachloride to said CVD reaction chamber is switched off, and heating is maintained for 3-10 hours, whereafter said CVD reaction chamber is cooled down to an ambient temperature, and said titanium tetrachloride remaining in said CVD reaction chamber is removed, whereafter said one-dimensional titanium nanostructure is taken out of said CVD reaction chamber, whereby said one-dimensional titanium nanostructure is a titanium nanotube having a diameter of 10-100 nm and a length of 0.1-9 μm, and said titanium nanotube is a monocrystalline titanium nanotube or a polycrystalline titanium nanotube. 
     
     
         18 . The method for fabricating a one-dimensional titanium nanostructure according to  claim 17 , wherein said one-dimensional titanium nanostructure deposits on said heat-resistant substrate at a deposition temperature of 600-800° C. 
     
     
         19 . The method for fabricating a one-dimensional titanium nanostructure according to  claim 17 , wherein monocrystalline titanium nanotube has an FCC lattice structure. 
     
     
         20 . A one-dimensional titanium nanostructure fabricated by the method according to  claim 1 .