US2014191376A1PendingUtilityA1

Semiconductor package and fabrication method thereof

50
Assignee: SILICONWARE PRECISION INDUSTRIES CO LTDPriority: Jan 8, 2013Filed: Apr 2, 2013Published: Jul 10, 2014
Est. expiryJan 8, 2033(~6.5 yrs left)· nominal 20-yr term from priority
Inventors:Fu-Tang HuangChun-Chi Ke
H10W 90/754H10W 90/753H10W 90/734H10W 90/732H10W 90/28H10W 74/00H10W 72/9445H10W 72/9415H10W 72/07554H10W 72/07553H10W 72/5453H10W 72/5445H10W 72/932H10W 72/922H10W 72/884H10W 72/879H10W 72/865H10W 72/547H10W 72/537H10W 72/354H10W 72/352H10W 72/325H10W 72/59H10W 70/655H10W 70/652H10W 42/271H10W 99/00H10W 90/00H10W 74/114H10W 74/01H10W 72/075H10W 72/073H10W 42/20H01L 21/02697H01L 23/552
50
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A semiconductor package is provided, including: a substrate; a first semiconductor element disposed on the substrate and having a first conductive pad grounded to the substrate; a conductive layer formed on the first semiconductor element and electrically connected to the substrate; a second semiconductor element disposed on the first semiconductor element through the conductive layer; and an encapsulant formed on the substrate and encapsulating the first and second semiconductor elements. Therefore, the first and second semiconductor elements are protected from electromagnetic interference (EMI) shielding with the conductive layer being connected to the grounding pad of the substrate. A fabrication method of the semiconductor package is also provided.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A semiconductor package, comprising:
 a substrate;   a first semiconductor element disposed on the substrate and having a first conductive pad grounded to the substrate;   a conductive layer formed on the first semiconductor element and electrically connected to the first conductive pad;   a second semiconductor element disposed on the conductive layer; and   an encapsulant formed on the substrate and encapsulating the first and second semiconductor elements.   
     
     
         2 . The semiconductor package of  claim 1 , wherein the substrate has a grounding pad for being grounded. 
     
     
         3 . The semiconductor package of  claim 1 , wherein the first conductive pad is grounded to the substrate by bonding wires. 
     
     
         4 . The semiconductor package of  claim 1 , wherein the second semiconductor element is electrically connected to the substrate. 
     
     
         5 . The semiconductor package of  claim 1 , wherein the first semiconductor element has a redistribution layer formed on the first conductive pad, the conductive layer is disposed on the redistribution layer, and the redistribution layer electrically connects the first conductive pad to the conductive layer and is grounded to the substrate. 
     
     
         6 . The semiconductor package of  claim 5 , wherein the redistribution layer has a conductive land electrically connected to the first conductive pad, and the conductive land is grounded to the substrate by bonding wires. 
     
     
         7 . The semiconductor package of  claim 1 , wherein the first semiconductor element has a redistribution layer, and the redistribution layer has the first conductive pad. 
     
     
         8 . The semiconductor package of  claim 1 , wherein the conductive layer is made of a conductive adhesive. 
     
     
         9 . The semiconductor package of  claim 1  further comprising an electronic element disposed on the substrate and grounded to the substrate and the first semiconductor element. 
     
     
         10 . A semiconductor package, comprising:
 a substrate;   a first semiconductor element disposed on the substrate and having a first conductive pad and a second conductive pad connected to the first conductive pad and grounded to the substrate;   a conductive layer formed on the first semiconductor element and electrically connected to the first conductive pad;   a second semiconductor element disposed on the conductive layer; and   an encapsulant formed on the substrate and encapsulating the first and second semiconductor elements.   
     
     
         11 . The semiconductor package of  claim 10 , wherein the substrate has a grounding pad for being grounded. 
     
     
         12 . The semiconductor package of  claim 10 , wherein the second conductive pad is grounded to the substrate by bonding wires. 
     
     
         13 . The semiconductor package of  claim 10 , wherein the first conductive pad is electrically connected to the second conductive pad by bonding wires. 
     
     
         14 . The semiconductor package of  claim 10 , wherein the first semiconductor element has an internal circuit, and the first conductive pad is electrically connected to the second conductive pad through the internal circuit. 
     
     
         15 . The semiconductor package of  claim 10 , wherein the second semiconductor element is electrically connected to the substrate. 
     
     
         16 . The semiconductor package of  claim 10 , wherein the first semiconductor element has a redistribution layer, and the redistribution layer has the first and second conductive pads. 
     
     
         17 . The semiconductor package of  claim 10 , wherein the conductive layer is made of a conductive adhesive. 
     
     
         18 . The semiconductor package of  claim 10  further comprising an electronic element disposed on the substrate and grounded to the substrate and the first semiconductor element. 
     
     
         19 . A fabrication method of a semiconductor package, comprising:
 providing a substrate;   disposing on the substrate a first semiconductor element having a first conductive pad;   grounding the first conductive pad and the substrate;   forming on the first semiconductor element a conductive layer electrically connected to the first conductive pad;   disposing a second semiconductor element on the conductive layer; and   forming on the substrate an encapsulant encapsulating the first and second semiconductor elements.   
     
     
         20 . The fabrication method of  claim 19 , wherein the substrate has a grounding pad for being grounded. 
     
     
         21 . The fabrication method of  claim 19 , wherein the first conductive pad is grounded to the substrate by bonding wires. 
     
     
         22 . The fabrication method of  claim 19 , wherein the second semiconductor element is electrically connected to the substrate. 
     
     
         23 . The fabrication method of  claim 19 , wherein the first semiconductor element has a redistribution layer formed on the first conductive pad, the conductive layer is disposed on the redistribution layer, and the redistribution layer electrically connects the first conductive pad to the conductive layer and is grounded to the substrate. 
     
     
         24 . The fabrication method of  claim 23 , wherein the redistribution layer has a conductive land electrically connected to the first conductive pad, and the conductive land is grounded to the substrate by bonding wires. 
     
     
         25 . The fabrication method of  claim 19 , wherein the first semiconductor element has a redistribution layer, and the redistribution layer has the first conductive pad. 
     
     
         26 . The fabrication method of  claim 19 , wherein the conductive layer is made of a conductive adhesive. 
     
     
         27 . The fabrication method of  claim 19  further comprising disposing on the substrate an electronic element grounded to the substrate and the first semiconductor element. 
     
     
         28 . A fabrication method of a semiconductor package, comprising:
 providing a substrate;   disposing on the substrate a first semiconductor element having a first conductive pad and a second conductive pad connected to the first conductive pad;   grounding the second conductive pad and the substrate;   forming on the first semiconductor element a conductive layer electrically connected to the first conductive pad;   disposing a second semiconductor element on the conductive layer; and   forming on the substrate an encapsulant encapsulating the first and second semiconductor elements.   
     
     
         29 . The fabrication method of  claim 28 , wherein the substrate has a grounding pad for being grounded. 
     
     
         30 . The fabrication method of  claim 28 , wherein the second conductive pad is grounded to the substrate by bonding wires. 
     
     
         31 . The fabrication method of  claim 28 , wherein the first conductive pad is electrically connected to the second conductive pad by bonding wires. 
     
     
         32 . The fabrication method of  claim 28 , wherein the first semiconductor element has an internal circuit, and the first conductive pad is electrically connected to the second conductive pad through the internal circuit. 
     
     
         33 . The fabrication method of  claim 28 , wherein the second semiconductor element is electrically connected to the substrate. 
     
     
         34 . The fabrication method of  claim 28 , wherein the first semiconductor element has a redistribution layer, and the redistribution layer has the first and second conductive pads. 
     
     
         35 . The fabrication method of  claim 28 , wherein the conductive layer is made of a conductive adhesive. 
     
     
         36 . The fabrication method of  claim 28  further comprising disposing on the substrate an electronic element grounded to the substrate and the first semiconductor element.

Join the waitlist — get patent alerts

Track US2014191376A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.