Method for chemical planarization and chemical planarization apparatus

Abstract

According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds to or adsorbs onto the to-be-processed film along the irregularity to suppress dissolution of the to-be-processed film. The method can include planarizing the to-be-processed film in a processing solution dissolving the to-be-processed film, by rotating the to-be-processed film and a processing body while the to-be-processed film contacting the processing body via the surface layer, removing the surface layer on convex portions of the irregularity while leaving the surface layer on concave portions of the irregularity and making dissolution degree of the convex portions larger than dissolution degree of the concave portions.

1 - 20 . (canceled) 
     
     
         21 . A chemical planarization apparatus capable of performing:
 planarizing a to-be-processed film in a processing solution configured to dissolve the to-be-processed film, a surface layer on the to-be-processed film having irregularity, the to-be-processed film including convex portions and concave portions, the to-be-processed film being a silicon oxide film, the surface layer binding to or adsorbing onto the to-be-processed film along the irregularity, to suppress dissolution of the to-be-processed film, the surface layer including first portions located on the convex portions and second portions located on the concave portions; and   the planarizing being performed by rotating the to-be-processed film and a processing body including a catalyst material while the to-be-processed film contacts the processing body via the surface layer, removing at least a part of the first portions by oxidation with radicals near the catalyst material to expose at least a part of the convex portions, removing the first portions while leaving the second portions and making dissolution degree of the convex portions larger than dissolution degree of the concave portions.   
     
     
         22 . The apparatus according to  claim 21 , wherein the processing solution includes one of a hydrogen fluoride solution, an ammonium fluoride solution, and a strong alkaline solution. 
     
     
         23 . The apparatus according to  claim 21 , wherein the surface layer is a layer of a surfactant. 
     
     
         24 . The apparatus according to  claim 21 , wherein
 the processing solution includes a raw material for forming the surface layer, and   the surface layer is formed from the raw material by contacting the processing solution including the raw material with the to-be-processed film.   
     
     
         25 . The apparatus according to  claim 21 , wherein
 the surface layer is a layer of a surfactant, and   the surfactant includes at least one of polyvinyl pyrrolidone and polyethyleneimine.   
     
     
         26 . The apparatus according to  claim 25 , wherein a weight average molecular weight of the polyvinyl pyrrolidone in terms of polyethylene glycol is not less than 20,000 and not more than 1,500,000. 
     
     
         27 . The apparatus according to  claim 25 , wherein a weight average molecular weight of the polyethyleneimine in terms of polyethylene glycol is not less than 10,000 and not more than 1,000,000. 
     
     
         28 . The apparatus according to  claim 25 , wherein the surfactant further includes polyacrylic acid. 
     
     
         29 . The apparatus according to  claim 28 , wherein a weight average molecular weight of the polyacrylic acid is not less than 2,000 and not more than 5,000,000. 
     
     
         30 . The apparatus according to  claim 21 , further capable of forming the to-be-processed film,
 the forming the to-be-processed film including one of a chemical vapor deposition method and a coating method.   
     
     
         31 . The apparatus according to  claim 21 , wherein
 the to-be-processed film is formed on a major surface of a base body, and   the base body includes a part serving as at least one of a semiconductor memory, a high-speed logic LSI, a system LSI, and a memory-logic hybrid LSI.   
     
     
         32 . The apparatus according to  claim 21 , wherein the processing body is a polishing pad. 
     
     
         33 . The apparatus according to  claim 21 , wherein the processing body includes a resin material. 
     
     
         34 . The apparatus according to  claim 21 , wherein the processing body includes platinum (Pt). 
     
     
         35 . The apparatus according to  claim 21 , wherein
 the surface layer is a layer of a surfactant, and   the surfactant includes at least one of functional groups of carboxylic acid type, sulfonic acid type, sulfate ester type, phosphate ester type, amine salt type, quarternary ammonium salt type, ether type, ester type, alkanolamide type, carboxybetaine type, and glycine type.   
     
     
         36 . The apparatus according to  claim 21 , wherein the processing solution does not contain an abrasive grain. 
     
     
         37 . The apparatus according to  claim 21 , wherein the radicals include hydroxyl radicals. 
     
     
         38 . The apparatus according to  claim 21 , wherein the surface layer is a layer of at least one of a self-assembled monolayer and a water repellent layer.