Non-volatile storage system with dual block programming

Abstract

A non-volatile storage system is disclosed that includes a plurality of blocks of non-volatile storage elements, a plurality of word lines connected to the blocks of non-volatile storage elements such that each word line is connected to adjacent blocks of non-volatile storage elements, a plurality of bit lines connected to the blocks of non-volatile storage elements, multiple sets of word lines drivers such that each set of word line drivers is positioned between two adjacent blocks for driving word lines connected to the two adjacent blocks, global data lines, local data lines in selective communication with the bit lines, one or more selection circuits that selectively connect the global data lines to selected local data lines and connect unselected local data lines to one or more unselected bit line signals and control circuitry in communication with the one or more selection circuits and the global data lines. The control circuitry concurrently programs non-volatile storage elements of two adjacent blocks by applying programming signals on word lines connected to the two adjacent blocks and applying programming signals on appropriate bit lines via the global data lines and the one or more selection circuits.

What is claimed is: 
     
         1 . A method for programming a non-volatile storage device, comprising:
 selectively connecting selected non-volatile storage elements of two adjacent blocks of non-volatile storage elements to one or more signal sources and connecting unselected non-volatile storage elements to one or more unselected storage element signals using one or more selection circuits, each of the one or more selection circuits can connect a respective signal source to one of two respective connected non-volatile storage elements and connect a respective unselected storage element signal to another of the two respective connected non-volatile storage elements; and   concurrently programming the two adjacent blocks of non-volatile storage elements while performing the selectively connecting.   
     
     
         2 . The method of  claim 1 , wherein the selectively connecting selected non-volatile storage elements of two adjacent blocks of non-volatile storage elements to one or more signal sources comprises:
 selecting a column of non-volatile storage elements in each of the two adjacent blocks;   connecting the selected columns to separate local data lines for each of the two adjacent blocks;   connecting selected local data lines to the one or more signal sources and connecting unselected data lines to one or more unselected voltages via a device having a first type of channel; and   providing the one or more unselected voltages via a device having a second type of channel to unselected columns of non-volatile storage elements.   
     
     
         3 . The method of  claim 1 , wherein the selectively connecting selected non-volatile storage elements of two adjacent blocks of non-volatile storage elements to one or more signal sources comprises:
 selecting a column of non-volatile storage elements in each of the two adjacent blocks;   connecting the selected columns to local data lines common for the two adjacent blocks; and   selectively connecting the local data lines to the one or more signal sources via a common set of selection circuits for the two adjacent blocks.   
     
     
         4 . The method of  claim 1 , wherein:
 the concurrently programming the two adjacent blocks of non-volatile storage elements programs a subset of memory cells for the two adjacent blocks connected to a common word line.