US2014184312A1PendingUtilityA1

Semiconductor devices and methods of controlling temperature thereof

Assignee: SAMSUNG ELECTRONICS CO LTDPriority: Nov 26, 2010Filed: Mar 4, 2014Published: Jul 3, 2014
Est. expiryNov 26, 2030(~4.3 yrs left)· nominal 20-yr term from priority
G05F 1/463H10W 90/734H10W 90/728H10W 90/724H10W 90/722H10W 90/701H10W 74/15H10W 72/07254H10W 72/247H10W 72/244H10W 70/681H10W 70/63H10W 40/10H10W 90/00H10W 70/685H10W 40/00
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Claims

Abstract

An example embodiment relates to a semiconductor device including a semiconductor package in which a semiconductor chip is mounted on the package substrate. The semiconductor package may include a temperature measurement device and a temperature control circuit. The temperature measurement device may measure a temperature of the semiconductor package. The temperature control circuit may change an operation speed of the semiconductor package on the basis of the temperature of the semiconductor package measured by the temperature measurement device.

Claims

exact text as granted — not AI-modified
1 .- 28 . (canceled) 
     
     
         29 . A method of controlling a temperature of a semiconductor device comprising:
 measuring a temperature of a semiconductor chip using a negative temperature coefficient thermistor;   outputting a resistance value from the negative temperature coefficient thermistor,   the resistance value corresponding to the measured temperature; and   changing a power applied to the semiconductor chip based on the resistance value and a reference resistance value.   
     
     
         30 . The method of  claim 29 , wherein the changing of power comprises:
 increasing the power applied to the semiconductor chip if the resistance value is higher than the reference resistance value; and   decreasing the power applied to the semiconductor chip if the resistance value is lower than the reference resistance value.   
     
     
         31 . The method of  claim 30 , wherein
 the increasing the power includes increasing an operation speed of the semiconductor chip, and   the decreasing the power includes decreasing the operation speed of the semiconductor chip.   
     
     
         32 . The method of  claim 29 , wherein
 the resistor is configured to decrease a self-heating of the negative temperature coefficient thermistor.   
     
     
         33 . The method of  claim 29 , further comprising:
 delivering the resistance value to an analog-digital converter;   converting the resistance value to a digital signal using the analog-digital converter;   delivering the digital signal to a processing unit,   wherein the changing a power applied to the semiconductor chip is performed by the processing unit.   
     
     
         34 . A method of controlling a temperature of a semiconductor device comprising:
 measuring a temperature of the semiconductor chip using a thermistor, the thermistor electrically connected to a resistor; and   changing a power applied to the semiconductor chip based on the thermistor temperature and a reference temperature.   
     
     
         35 . The method of  claim 34 , wherein the changing of power comprises:
 decreasing the power applied to the semiconductor chip if the thermistor temperature is higher than the reference temperature; and   increasing the power applied to the semiconductor chip if the theimistor temperature is lower than the reference temperature.   
     
     
         36 . The method of  claim 34 , further comprising:
 delivering a signal corresponding to the thermistor temperature to an analog-digital converter;   converting the signal corresponding to the thermistor temperature to a digital signal using the analog-digital converter; and   delivering the digital signal to a processing unit,   wherein the changing a power applied to semiconductor chip is performed by the processing unit.   
     
     
         37 .- 42 . (canceled)

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