Semiconductor package and fabrication method thereof

Abstract

A semiconductor package is provided, which includes a carrier having a mounting area and at least a grounding pad; a substrate body having opposite first and second surfaces and a plurality of conductive vias each having a first end exposed from the first surface and a second end opposite to the first end, the substrate body being disposed on the mounting area of the carrier through the second surface thereof; a metal layer formed on the first surface of the substrate body and exposing the first ends of the conductive vias; a conductive body electrically connecting the metal layer and the grounding pad; and a semiconductor element disposed on the substrate body and electrically connected to the first ends of the conductive vias, thereby achieving an EMI shielding effect to prevent interference between electromagnetic waves or electrical signals of the substrate body and the semiconductor element.

What is claimed is: 
     
         1 . A semiconductor package, comprising:
 a carrier having a mounting area and at least a grounding pad;   a substrate body disposed on the mounting area of the carrier, wherein the substrate body has opposite first and second surfaces and a plurality of conductive vias each having a first end exposed from the first surface of the substrate body and a second end opposite to the first end, and the substrate body is disposed on the mounting area of the carrier through the second surface thereof;   a metal layer formed on the first surface of the substrate body and exposing the first ends of the conductive vias;   a conductive body electrically connecting the metal layer and the grounding pad; and   a semiconductor element disposed on the first surface of the substrate body and electrically connected to the first ends of the conductive vias.   
     
     
         2 . The package of  claim 1 , further comprising an insulating layer formed between the first surface of the substrate body and the metal layer and exposing the first ends of the conductive vias. 
     
     
         3 . The package of  claim 1 , further comprising a conductive material formed on the first ends of the conductive vias. 
     
     
         4 . The package of  claim 3 , wherein the metal layer has a plurality of openings for exposing the conductive material and forming a gap between the conductive material and the metal layer. 
     
     
         5 . The package of  claim 1 , wherein the conductive vias penetrate the first and second surfaces of the substrate body and the package further comprises a plurality of conductive bumps respectively formed on the second ends of the conductive vias. 
     
     
         6 . The package of  claim 1 , wherein the conductive body is made of a conductive adhesive, which extends from the metal layer along a side surface of the substrate body to the grounding pad of the carrier. 
     
     
         7 . The package of  claim 1 , wherein the grounding pad is located outside the mounting area. 
     
     
         8 . The package of  claim 1 , further comprising an encapsulant formed on the carrier for encapsulating the substrate body, the metal layer, the conductive body and the semiconductor element. 
     
     
         9 . A fabrication method of a semiconductor package, comprising the steps of:
 providing a substrate body having opposite first and second surfaces and a plurality of conductive vias each having a first end exposed from the first surface of the substrate body and a second end opposite to the first end;   forming a metal layer on the first surface of the substrate body, wherein the first ends of the conductive vias are exposed from the metal layer;   disposing the substrate body on a carrier through the second surface thereof, wherein the carrier has at least a grounding pad; and   disposing a semiconductor element on the first surface of the substrate body and electrically connecting the semiconductor element and the first ends of the conductive vias, and electrically connecting the metal layer and the grounding pad through at least a conductive body.   
     
     
         10 . The method of  claim 9 , wherein forming the metal layer on the first surface of the substrate body comprises:
 forming an insulating layer on the first surface of the substrate body, wherein the first ends of the conductive vias are exposed from the insulating layer;   forming a conductive material on the first ends of the conductive vias; and   forming the metal layer on the insulating layer, wherein the metal layer has a plurality of openings for exposing the conductive material.   
     
     
         11 . The method of  claim 9 , wherein the conductive body is made of a conductive adhesive, which extends from the metal layer along a side surface of the substrate body to the grounding pad of the carrier. 
     
     
         12 . The method of  claim 9 , further comprising thinning the substrate body from the second surface thereof so as to expose the second ends of the conductive vias. 
     
     
         13 . The method of  claim 9 , wherein the metal layer and the grounding pad are electrically connected through the conductive body first and then the semiconductor element is disposed on the first surface of the substrate body and electrically connected to the first ends of the conductive vias. 
     
     
         14 . The method of  claim 9 , wherein the semiconductor element is disposed on the first surface of the substrate body and electrically connected to the first ends of the conductive vias first and then the metal layer and the grounding pad are electrically connected through the conductive body. 
     
     
         15 . The method of  claim 9 , further comprising forming an encapsulant on the carrier for encapsulating the substrate body, the metal layer, the conductive body and the semiconductor element.