Plasma processing device

Abstract

A plasma processing device according to one embodiment comprises a processing vessel, a gas supply unit, a lower electrode and an upper electrode. The processing vessel defines a processing space. The gas supply unit supplies processing gas into the processing space. The lower electrode is provided below the processing space. The upper electrode is provided above the processing space, and a covering layer having plasma-resistant properties is formed on this upper electrode. The surface of this covering layer is polished.

1 . A plasma processing device comprising:
 a processing vessel configured to define a processing space;   a gas supply unit configured to supply a processing gas into the processing space;   a lower electrode provided at a lower side of the processing space; and   an upper electrode provided at an upper side of the processing space, and formed with a covering layer having plasma resistance,   wherein a surface of the covering layer is polished.   
     
     
         2 . The plasma processing device of  claim 1 , wherein the covering layer is a Y 2 O 3  layer. 
     
     
         3 . The plasma processing device of  claim 1 , wherein the surface of the covering layer has a surface area ranging from 20,000 μm 2  to 30,000 μm 2 .