Conductive aluminum paste and the fabrication method thereof, the solar cell and the module thereof

Abstract

This present disclosure relates to conductive aluminum paste for fabricating a silicon solar cell. Herein, the conductive aluminum paste is composed of organic carrier, aluminum powder, nano-scale metal particle, and glass frit, wherein the nano-scale metal particle has a particle size distribution D50 in the range from 10 nanometers to 1000 nanometers and the weight percentage of the nano-scale metal particle associated with the conductive aluminum paste is around 0.1 through 10 wt %. Furthermore, the characteristics of the conductive aluminum paste are for reducing the sheet resistance value of the electrode, increasing the adhesion in the silicon solar cell package module, and enhancing the electro-optical conversion efficiency of the silicon solar cell.

1 - 7 . (canceled) 
     
     
         8 . A silicon solar cell module, comprising:
 a substrate;   a covering plate, located on the substrate; and   a silicon solar cell, covered with EVA material, and located between the substrate and the covering plate;   wherein, the silicon solar cell has a light incident side electrode and a back side electrode, and the back side electrode is made of conductive aluminum paste, and the conductive aluminum paste has nano-scale metal particle mixed therein.   
     
     
         9 . The silicon solar cell module according to  claim 8 , wherein the nano-scale metal particle is gold, silver, copper, zinc or lead metal material, weight percentage of the nano-scale metal particle associated with the conductive aluminum paste is around 0.1 through 10 wt %, and the nano-scale metal particle has a particle size distribution D50 in the range from 10 nanometers to 1000 nanometers, the preferred weight percentage of the nano-scale metal particle associated with the conductive aluminum paste is 2wt %, and the nano-scale metal particle has the preferred particle size distribution D50 being 30 nanometers. 
     
     
         10 . The silicon solar cell module according to  claim 8 , wherein the weight percentage of the aluminum powder associated with the conductive aluminum paste is around 65 through 85 wt %, and the aluminum powder is further replaced by silver powder. 
     
     
         11 . The silicon solar cell module according to  claim 8 , wherein the organic solvent is the organic solvent of the alcohol ether class, the organic solvent of the alcohol ether class is diethylene glycol monobutyl ether, and the weight percentage of the organic solvent associated with the conductive aluminum paste is around 15 through 25 wt %. 
     
     
         12 . The silicon solar cell module according to  claim 8 , wherein the glass frit is selected from the glass frit of lead compound, and the weight percentage of the glass frit associated with the conductive aluminum paste is around 0.1 through 6 wt %. 
     
     
         13 . The silicon solar cell module according to  claim 8 , wherein the substrate is a lightproof substrate or a combination of the transparent substrate and a non-transparent layer, and the substrate is a metal substrate, a glass substrate, and a plastic substrate, the covering plate  31  is the general glass, the tempered glass, the acrylic fabric board, the sheet metal, or the thin plastic plate. 
     
     
         14 . The silicon solar cell module according to  claim 8 , wherein the EVA material is melted by using a high temperature and high pressure process under a vacuum environment, so as to pack the silicon solar cell between substrate and the covering plate, and cover the silicon solar cell in the EVA material. 
     
     
         15 . The silicon solar cell module according to  claim 8 , wherein the silicon solar cell further comprises:
 a semiconductor substrate, having a N-type diffused layer and a P-type diffused layer located thereon; and   an anti-reflection layer, formed on the surface of the N-type diffused layer;   wherein the light incident side electrode and the back side electrode are respectively is formed on the surfaces of the N-type diffused layer and the P-type diffused layer.