Film forming apparatus

Abstract

A method for forming a film includes the steps of: placing an object to be processed into a processing container; and generating M(BH 4 ) 4 gas by feeding H 2 gas as carrier gas into a raw material container in which solid M(BH 4 ) 4 (where M is Zr or Hf) is accommodated to introduce a mixture gas of H 2 gas and M(BH 4 ) 4 gas having a volume ratio of flow rates (H 2 /M(BH 4 ) 4 ) of 2 or more into the processing container, and deposit a MB x film (where M is Zr or Hf and x is 1.8 to 2.5) on the object using a thermal CVD.

1 - 7 . (canceled) 
     
     
         8 . An apparatus for forming a film, comprising:
 a processing container which can be made vacuous;   a loading table which is placed in the processing container and loads an object to be processed;   a heater which heats the object loaded on the loading table to a predetermined temperature;   an exhauster which exhausts the interior of the processing container in a pressure reducing manner;   a raw material container holding solid raw material, M(BH 4 ) 4  (where M is Zr or Hf);   a temperature regulator which cools or heat-insulates the solid raw material in the raw material container;   a H 2  gas feeder which feeds H 2  gas into the raw material container; and   a gas feeding pipe through which a mixture gas of H 2  gas and M(BH 4 ) 4  gas is fed from the raw material container into the processing container;   wherein the mixture gas of H 2  gas and M(BH 4 ) 4  gas is introduced while controlling a flow rate of the M(BH 4 ) 4  gas evaporated by the feeding of the H 2  gas and a volume ratio of flow rates (H 2 /M(BH 4 ) 4 ) of H 2  gas and M(BH 4 ) 4  gas, by adjusting a flow rate of H 2  gas fed into the raw material container and an internal pressure of the raw material container, and a MB x  film (where M is Zr or Hf and x is 1.8 to 2.5) is deposited on the object using a thermal CVD.   
     
     
         9 . The apparatus of  claim 8 , wherein an internal pressure of the processing container is set to 10 Pa or more to 300 Pa or less when the MB x  film is deposited. 
     
     
         10 . The apparatus of  claim 8 , wherein a temperature of the object is set to 160° C. or more to 300° C. or less when the MB x  film is deposited. 
     
     
         11 . The apparatus of  claim 8 , wherein the H 2  gas is fed while the solid raw material in the raw material container is cooled and maintained in a range of −15° C. to 5° C.