System and method for removing oxide from a sensor clip assembly

Abstract

According to embodiments of the present disclosure, a method for removing oxide includes placing a sensor chip assembly having an oxide layer formed on a portion thereof within an enclosed and controlled environment. The portion of the sensor chip assembly is exposed to a reactive gas and a UV light to result in a substantial removal of the oxide layer formed on the portion of the sensor chip assembly.

1 . A system for removing oxide comprising:
 a reactive chamber configured to provide an enclosed and controlled environment for receiving a sensor chip assembly;   a first gas supply coupled to the reactive chamber, the first gas supply maintaining a supply of reactive gas;   a UV lamp operable to generate UV light within the reactive chamber, and   at least one controller in communication with the first gas supply and the UV light, the at least one controller operable to simultaneously expose the sensor chip assembly to the reactive gas and the UV light to result in the substantial removal of a layer of oxide formed on a portion of the sensor chip assembly.   
     
     
         2 . The system of  claim 1 , wherein the at least one controller is configured to maintain a temperature of the enclosed and controlled environment below a temperature of approximately 156 degrees Celsius. 
     
     
         3 . The system of  claim 1 , wherein the sensor chip assembly comprises a Focal Plane Array. 
     
     
         4 . The system of  claim 1 , wherein:
 the sensor chip assembly comprises one or more of a detector array and a readout integrated circuit; and   the portion on which the oxide layer is formed comprises an interconnect of one or more of the detector array and the readout integrated circuit.   
     
     
         5 . The system of  claim 1 , wherein the sensor chip assembly comprises:
 a first component comprising a detector array having a first interconnect component; and   a second component comprising a readout integrated circuit having a second interconnect component, and,   wherein the portion of the sensor chip assembly on which the oxide layer is formed comprises one or more of the first interconnect component and the second interconnect component.   
     
     
         6 . The system of  claim 1 , wherein the reactive gas comprises a formic acid selected from the group consisting of methanoic acid, Aminic acid, Formylic acid, Hydrogen carboxylic acid, Hydroxymethanone, Hydroxy(oxo)methane, Metacarbonoic acid, Oxocarbinic acid, and Oxomethanol. 
     
     
         7 . The system of  claim 1 , wherein the controller is operable to expose the portion of the integrated circuit device to the reactive gas and the UV light for at least  5  minutes.