US2014170815A1PendingUtilityA1

Embedded ball grid array substrate and manufacturing method thereof

Assignee: SAMSUNG ELECTRO MECHPriority: Sep 10, 2010Filed: Feb 21, 2014Published: Jun 19, 2014
Est. expirySep 10, 2030(~4.1 yrs left)· nominal 20-yr term from priority
H10W 90/754H10W 90/735H10W 74/00H10W 72/07331H10W 72/07304H10W 72/354H10W 72/075H10W 72/073H10W 70/682H10W 70/635H10W 70/614H10W 72/012H10W 99/00H10W 72/30H10W 72/50H01L 24/11
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Claims

Abstract

Disclosed herein are an embedded ball grid array substrate and a manufacturing method thereof. The embedded ball grid array includes: a core layer having a cavity therein; a semiconductor device embedded in the cavity of the core layer; a first circuit layer having a circuit pattern including a wire bonding pad formed thereon; a second circuit layer having a circuit pattern including a solder ball pattern formed thereon; and a wire electrically connecting the semiconductor device to the wire bonding pad.

Claims

exact text as granted — not AI-modified
1 - 5 . (canceled) 
     
     
         6 . A manufacturing method of an embedded ball grid array substrate, comprising:
 (A) removing a copper clad of the first insulating layer, after preparing a copper cladded laminate formed with a copper clad at both sides of the first insulating layer and forming a cavity;   (B) attaching a heat-resistant tape to an opposite surface to a surface from which the copper clad of the copper clad laminate is removed;   (C) mounting a semiconductor device in a cavity of the copper clad laminate and stacking a second insulating layer and a copper clad on a surface from which the copper clad is removed;   (D) forming a first circuit layer formed with a circuit pattern including a wire bonding pad at a copper clad contacting the first insulating layer and forming a circuit pattern including a solder ball pad at a copper clad contacting the second insulating layer; and   (E) bonding and electrically connecting the semiconductor device to a wire bonding pad by a wire.   
     
     
         7 . The manufacturing method of the embedded ball grid array substrate as set forth in  claim 6 , further comprising after step (C),
 (F) forming a via hole penetrating through the first insulating layer and a second insulating layer.   
     
     
         8 . The manufacturing method of the embedded ball grid array substrate as set forth in  claim 6 , further comprising after step (D),
 (G) stacking a first solder resist on a first circuit layer and stacking a second solder resist on a second circuit layer;   (H) forming holes at a position corresponding to the wire bonding pad of the first circuit layer at the first solder resist; and   (I) forming holes at a position corresponding to the solder ball pad of the second circuit layer at the second solder resist.   
     
     
         9 . The manufacturing method of the embedded ball grid array substrate as set forth in  claim 6 , wherein at step (B), the heat-resistant tape is a polyimide film. 
     
     
         10 . The manufacturing method of the embedded ball grid array substrate as set forth in  claim 6 , wherein step (C) includes:
 (C-1) mounting the semiconductor device in the cavity of the copper clad laminate;   (C-2) stacking the second insulating layer on a surface from which the copper clad is removed;   (C-3) stacking the copper clad on the second insulating layer by using a carrier; and   (C-4) removing the carrier.   
     
     
         11 . The manufacturing method of the embedded ball grid array substrate as set forth in  claim 6 , wherein step (D) includes:
 (D-1) stacking a dry film on a copper clad contacting the first insulating layer and a copper clad contacting the second insulating layer;   (D-2) forming a pattern corresponding to a circuit pattern of the first circuit layer including the wire bonding pad on the first dry film stacked on the copper clad contacting the first insulating layer and forming a pattern corresponding to a circuit pattern of the second circuit layer including the solder ball pad on the second dry film stacked on the copper clad contacting the second insulating layer; and   (D-3) completing the first circuit layer and the second circuit layer formed with the circuit pad including the wire bonding pad and the solder ball pad by etching the copper clad according to the pattern of the first dry film and the second dry film.

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