Ceramic composition having dispersion of nano-particles therein and methods of fabricating same

Abstract

Ceramic compositions having a dispersion of nano-particles therein and methods of fabricating ceramic compositions having a dispersion of nano-particles therein are described. In an example, a method of forming a composition having a dispersion of nano-particles therein includes forming a mixture of semiconductor nano-particles and ceramic precursor molecules. A ceramic matrix is formed from the ceramic precursor molecules. The ceramic matrix includes a dispersion of the semiconductor nano-particles therein. In another example, a composition includes a medium including ceramic precursor molecules. The medium is a liquid or gel at 25 degrees Celsius. A plurality of semiconductor nano-particles is suspended in the medium.

1 . A method of forming a composition having a dispersion of nano-particles therein, the method comprising:
 forming a mixture of semiconductor nano-particles and ceramic precursor molecules; and   forming a ceramic matrix from the ceramic precursor molecules, the ceramic matrix comprising a dispersion of the semiconductor nano-particles therein.   
     
     
         2 . The method of  claim 1 , wherein the ceramic precursor molecules are discrete molecules, and forming the ceramic matrix comprises forming an infinite inorganic network. 
     
     
         3 . The method of  claim 2 , wherein the discrete molecules are metal alkoxide molecules, and forming the infinite inorganic network comprises hydrolysis of the metal alkoxide molecules to form a hydrolyzed species. 
     
     
         4 . The method of  claim 3 , further comprising:
 subsequent to the hydrolysis, condensating and then cross-linking the hydrolyzed species to form a sol-gel mixture.   
     
     
         5 . The method of  claim 1 , wherein the ceramic precursor molecules are metal or metal-organic clusters. 
     
     
         6 . The method of  claim 1 , wherein the ceramic precursor molecules are polymeric. 
     
     
         7 . The method of  claim 6 , wherein the polymeric ceramic precursor molecules are linear metal oxide polymers, and forming the ceramic matrix comprises forming a metal oxide matrix via cross-linking mechanisms. 
     
     
         8 . The method of  claim 6 , wherein the polymeric ceramic precursor molecules are thermal or ultra-violet (UV) labile polysilsequioxane molecules having one or more β-electron withdrawing groups, and forming the ceramic matrix comprises forming a silica-rich or silicate matrix via heating or UV-light exposure. 
     
     
         9 . The method of  claim 1 , wherein the ceramic precursor molecules are non-metal ceramic precursor molecules, and forming the ceramic matrix comprises catalyzing the non-metal ceramic precursor molecules to form a silica matrix. 
     
     
         10 . The method of  claim 1 , wherein the ceramic precursor molecules are metal ceramic precursor molecules, and forming the ceramic matrix comprises catalyzing the metal ceramic precursor molecules to form a metal oxide matrix. 
     
     
         11 . The method of  claim 10 , wherein the forming the metal oxide matrix comprises forming a metal silicate matrix selected from the group consisting of an aluminosilicate matrix or a titaniasilicate matrix. 
     
     
         12 . The method of  claim 10 , wherein catalyzing the metal ceramic precursor molecules to form the metal oxide matrix comprises adding a strong base to the mixture. 
     
     
         13 . The method of  claim 10 , wherein catalyzing the metal ceramic precursor molecules to form the metal oxide matrix comprises heating the mixture. 
     
     
         14 . The method of  claim 10 , wherein catalyzing the metal ceramic precursor molecules to form the metal oxide matrix comprises exposing the mixture to ultra-violet (UV) light. 
     
     
         15 . The method of  claim 1 , wherein forming the mixture of semiconductor nano-particles and ceramic precursor molecules comprises forming a suspension of the semiconductor nano-particles and ceramic precursor molecules in a solvent selected from the group consisting of toluene, ethyl benzene, tetrahydrofuran, hexane, and cyclohexane. 
     
     
         16 . The method of  claim 1 , wherein forming the mixture of semiconductor nano-particles and ceramic precursor molecules comprises forming the mixture in the absence of a solvent. 
     
     
         17 . The method of  claim 1 , wherein forming the mixture and forming the ceramic matrix are performed in an acid-free environment. 
     
     
         18 . The method of  claim 1 , wherein forming the mixture and forming the ceramic matrix are performed under aqueous conditions. 
     
     
         19 . The method of  claim 1 , wherein forming the mixture and forming the ceramic matrix are performed under anhydrous conditions. 
     
     
         20 . The method of  claim 1 , wherein forming the mixture of semiconductor nano-particles and ceramic precursor molecules comprises forming a mixture of quantum dots and the ceramic precursor molecules. 
     
     
         21 . The method of  claim 20 , wherein the quantum dots are hetero-structure quantum dots having an outer insulator coating. 
     
     
         22 . The method of  claim 1 , the method further comprising:
 applying the ceramic matrix comprising the dispersion of the semiconductor nano-particles therein to a surface of a light-emitting diode (LED).   
     
     
         23 . The method of  claim 22 , wherein applying the ceramic matrix to the surface of the LED comprises using a technique selected from the group consisting of spraying, dip-coating, spin-coating, and drop-casting. 
     
     
         24 . The method of  claim 22 , wherein applying the ceramic matrix to the surface of the LED further comprises curing the ceramic matrix with ultra-violet (UV) light exposure or heating. 
     
     
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