Cascode circuit device with improved reverse recovery characteristic

Abstract

A semiconductor device including: an FET; a MOSFET having a drain thereof connected with a source of the FET; a resistor having one end thereof connected with a gate of the FET and having the other end thereof connected with a source of the MOSFET; and a diode having an anode thereof connected with the gate of the FET and having a cathode thereof connected with the source of the MOSFET.

1 . A semiconductor device comprising:
 a first field-effect transistor being of a normally-on type;   a second field-effect transistor being of a normally-off type and having a drain thereof connected with a source of the first field-effect transistor;   a resistor having one end thereof connected with a gate of the first field-effect transistor and having the other end thereof directly connected with a source of the second field-effect transistor; and   a diode having an anode thereof connected with the gate of the first field-effect transistor and having a cathode thereof directly connected with the source of the second field-effect transistor,   wherein the resistor and the diode are connected in parallel with each other such that, at a time of turning off of the semiconductor device, electric currents flow to the resistor and the diode, respectively.   
     
     
         2 . The semiconductor device as set forth in  claim 1 , wherein the diode is a Schottky junction diode formed by joining (i) an electrode of the source of the second field-effect transistor and (ii) a semiconductor to each other. 
     
     
         3 . An electronic device comprising a semiconductor device,
 the semiconductor device including;   a first field-effect transistor being of a normally-on type;   a second field-effect transistor being of a normally-off type and having a drain thereof connected with a source of the first field-effect transistor;   a resistor having one end thereof connected with a gate of the first field-effect transistor and having the other end thereof directly connected with a source of the second field-effect transistor; and   a diode having an anode thereof connected with the gate of the first field-effect transistor and having a cathode thereof directly connected with the source of the second field-effect transistor,   wherein the resistor and the diode are connected in parallel with each other such that, at a time of turning off of the semiconductor device, electric currents flow to the resistor and the diode, respectively.