Photovoltaic device

Abstract

An article, such as a photovoltaic device, and methods for making such articles, are provided. For example, one embodiment is an article comprising a plurality of layers comprising an absorber layer and a window stack. The window stack comprises antimony.

1 . An article comprising:
 a plurality of layers comprising an absorber layer and a window stack, the window stack comprising antimony.   
     
     
         2 . The article of  claim 1 , wherein the window stack further comprises a window layer, a transparent conducting oxide (TCO) layer, and a buffer layer, wherein the window layer, the TCO layer, the buffer layer, or a combination of these, comprises antimony. 
     
     
         3 . The article of  claim 2 , wherein the antimony is disposed in a non-uniform distribution within the window stack. 
     
     
         4 . The article of  claim 3 , wherein the non-uniform distribution of antimony within the window stack has a maximum concentration within the buffer layer. 
     
     
         5 . The article of  claim 1 , wherein the absorber layer comprises a chalcogenide comprising cadmium and tellurium. 
     
     
         6 . The article of  claim 2 , wherein the window layer comprises cadmium and sulfur. 
     
     
         7 . The article of  claim 6 , wherein the window layer comprises cadmium sulfide. 
     
     
         8 . The article of  claim 7  wherein the window layer has a thickness of up to about 90 nanometers. 
     
     
         9 . The article of  claim 7  wherein the window layer has a thickness of up to about 60 nanometers. 
     
     
         10 . The article of  claim 2 , wherein the TCO layer comprises indium tin oxide, fluorine-doped tin oxide, or cadmium tin oxide. 
     
     
         11 . The article of  claim 2 , wherein the buffer layer comprises zinc oxide, zinc tin oxide, or titanium oxide. 
     
     
         12 . A photovoltaic device, comprising:
 a window stack disposed on a support, wherein the window stack comprises
 a transparent conducting oxide layer (TCO) comprising cadmium tin oxide, 
 a buffer layer comprising zinc tin oxide disposed over the TCO layer, and 
 a window layer comprising cadmium and sulfur disposed over the buffer layer, 
   wherein the window stack comprises a non-uniform distribution of antimony having a maximum concentration point disposed within the buffer layer.   
     
     
         13 . A method comprising:
 disposing a plurality of layers on a support, wherein the plurality of layers comprises an absorber layer and a window stack, the window stack comprising antimony.   
     
     
         14 . The method of  claim 13 , wherein the disposing step comprises disposing a window stack comprising a window layer, a transparent conducting oxide (TCO) layer, and a buffer layer, wherein the window layer, the TCO layer, the buffer layer, or a combination of these, comprises antimony. 
     
     
         15 . The method of  claim 14 , wherein window stack comprises a window layer, a transparent conducting oxide (TCO) layer, and a buffer layer, and wherein the disposing step comprises disposing an intermediate layer comprising antimony on the window layer, the TCO layer, or the buffer layer. 
     
     
         16 . The method of  claim 15 , wherein the intermediate layer has a thickness of up to about 10 nanometers. 
     
     
         17 . The method of  claim 15 , further comprising diffusing antimony from the intermediate layer into at least one of the layers of the window stack. 
     
     
         18 . The method of  claim 13 , wherein a maximum value of antimony concentration within the window stack occurs within a buffer layer of the window stack.