Method of manufacturing semiconductor device and substrate processing apparatus

Abstract

Provided is a method of manufacturing a semiconductor device. The method includes (a) loading a substrate into a processing chamber; (b) starting a supply of a first processing gas into the processing chamber; (c) starting a supply of a second processing gas into the processing chamber during the supply of the first processing gas; (d) stopping the supply of the second processing gas during the supply of the first processing gas; (e) stopping the supply of the first processing gas after performing the step (d); (f) removing the first processing gas and the second processing gas remaining after performing the step (e) from the processing chamber; and (g) unloading the substrate from the processing chamber.

What is claimed is: 
     
         1 . A method of manufacturing a semiconductor device, comprising:
 (a) loading a substrate into a processing chamber;   (b) starting a supply of a first processing gas into the processing chamber;   (c) starting a supply of a second processing gas into the processing chamber during the supply of the first processing gas;   (d) stopping the supply of the second processing gas during the supply of the first processing gas;   (e) stopping the supply of the first processing gas after performing the step (d);   (f) removing the first processing gas and the second processing gas remaining after performing the step (e) from the processing chamber; and   (g) unloading the substrate from the processing chamber.   
     
     
         2 . The method according to  claim 1 , wherein the steps (b) through (f) are performed in order a predetermined number of times to form a predetermined film. 
     
     
         3 . The method according to  claim 1 , wherein the first processing gas includes a nitrogen-containing gas, the second processing gas includes a titanium-containing gas, and the film formed on the substrate includes a titanium nitride. 
     
     
         4 . The method according to  claim 1 , wherein the second processing gas includes a metal-containing gas. 
     
     
         5 . The method according to  claim 1 , wherein a time period during which the first processing gas is supplied between the steps (b) and (c) ranges from 0.1 to 30 seconds. 
     
     
         6 . The method according to  claim 1 , wherein a time period during which the first processing gas is supplied between the steps (d) and (e) ranges from 0.1 to 30 seconds. 
     
     
         7 . The method according to  claim 1 , further comprising:
 (h) starting a supply of the first processing gas into the processing chamber after performing the step (f) and stopping the supply of the first processing gas; and   (i) removing the first processing gas remaining after performing the step (h) from the processing chamber.   
     
     
         8 . The method according to  claim 7 , wherein the steps (b) through (i) are performed in order a predetermined number of times to form a predetermined film. 
     
     
         9 . The method according to  claim 7 , wherein the first processing gas includes a nitrogen-containing gas, the second processing gas includes a titanium-containing gas, and the film formed on the substrate includes a titanium nitride. 
     
     
         10 . The method according to  claim 7 , wherein the second processing gas includes a metal-containing gas.