Manufacturing method for solar cell

Abstract

Provided is a method for manufacturing a solar cell with improved output characteristics. A hydrogen radical treatment, in which ions are not used, is performed on at least one of the first and second semiconductor layers ( 11, 13 ).

What is claimed is: 
     
         1 . A manufacturing method for a solar cell comprising the steps of:
 forming a first semiconductor layer of one type of conductivity on the first main surface of a semiconductor substrate of the one type of conductivity;   forming a second semiconductor layer of the other type of conductivity on the second main surface of the semiconductor substrate; and   performing hydrogen radical treatment without using ions on at least one of the first and second semiconductor layers.   
     
     
         2 . The manufacturing method for a solar cell according to  claim 1 , wherein the hydrogen radical treatment without using ions is performed using at least one of the remote plasma method, the catalytic chemical vapor deposition method, and the hot wire method. 
     
     
         3 . The manufacturing method for a solar cell according to  claim 1 , wherein the step of forming the first semiconductor layer comprises the steps of:
 forming a substantially intrinsic i-type amorphous silicon semiconductor layer on the first main surface of the semiconductor layer; and   forming an amorphous silicon semiconductor layer of the one type of conductivity on the i-type amorphous silicon semiconductor layer;   the hydrogen radical treatment without using ions being performed on the amorphous silicon semiconductor layer of the one type of conductivity.   
     
     
         4 . The manufacturing method for a solar cell according to  claim 1 , wherein the step of forming the second semiconductor layer comprises the steps of:
 forming a substantially intrinsic i-type amorphous silicon semiconductor layer on the second main surface of the semiconductor layer; and   forming an amorphous silicon semiconductor layer of the other type of conductivity on the i-type amorphous silicon semiconductor layer;   the hydrogen radical treatment without using ions being performed on the amorphous silicon semiconductor layer of the other type of conductivity.   
     
     
         5 . The manufacturing method for a solar cell according to  claim 3  further comprising the steps of: exposing the semiconductor substrate to the air, and forming a transparent conductive oxide layer on at least one of the first and second semiconductor layers after the hydrogen radical treatment has been performed. 
     
     
         6 . A manufacturing method for a solar cell comprising the steps of:
 forming a substantially intrinsic first i-type semiconductor layer on the first main surface of a semiconductor substrate of one type of conductivity;   forming a first semiconductor layer of the one type of conductivity on the first i-type semiconductor layer;   forming a substantially intrinsic second i-type semiconductor layer on the second main surface of the semiconductor substrate; and   forming the second semiconductor layer of the other type of conductivity on the second i-type semiconductor layer;   the hydrogen radical treatment without using ions being performed on at least one of the first and second i-type semiconductor layers after the formation of the first i-type semiconductor layer or after the formation of the second i-type semiconductor layer.   
     
     
         7 . The manufacturing method for a solar cell according to  claim 6 , wherein the hydrogen radical treatment without using ions is performed using at least one of the remote plasma method, the catalytic chemical vapor deposition method, and the hot wire method. 
     
     
         8 . The manufacturing method according to  claim 6 , wherein at least one of the first i-type semiconductor layer, the first semiconductor layer, the second i-type conductive layer, and the second semiconductor layer is an amorphous silicon semiconductor containing hydrogen. 
     
     
         9 . A manufacturing method for a plurality of solar cells including a substrate, a substantially intrinsic i-type semiconductor layer arranged on the substrate, and a semiconductor layer doped with a dopant arranged on the substrate, the method comprising the steps of:
 a first fixing step for fixing the substrate to a tray;   a semiconductor layer formation step for forming the i-type semiconductor layer on the substrate fixed to the tray, and then forming a semiconductor layer doped with a dopant;   an irradiation step after the semiconductor layer formation step for irradiating at least one of hydrogen radicals and hydrogen ions in the tray;   a removal step for removing the semiconductor from the tray before the irradiation step or after the irradiation step; and   a second fixing step for fixing a new substrate to the tray from which the substrate was removed in the removal step;   the second fixing step, the semiconductor layer formation step, the irradiation step, and the removal step being repeated several more times.   
     
     
         10 . The manufacturing method for a solar cell according to  claim 9 , wherein the irradiation step is performed before the removal step. 
     
     
         11 . The manufacturing method for a solar cell according to  claim 10 , wherein the transparent conductive layer is formed on the semiconductor layer doped with the dopant after the irradiation step. 
     
     
         12 . The manufacturing method for a solar cell according to  claim 9 , wherein the solar cell comprises: a semiconductor substrate composed of a substrate having one type of conductivity; a first semiconductor layer composed of a semiconductor layer having the one type of conductivity arranged on the semiconductor substrate, and being doped with the dopant; a second semiconductor layer composed of a semiconductor layer having the other type of conductivity arranged on the semiconductor substrate, and being doped with the dopant; a first substantially intrinsic i-type semiconductor layer arranged between the semiconductor substrate and the first semiconductor layer; and a second substantially intrinsic i-type semiconductor layer arranged between the semiconductor substrate and the second semiconductor layer.