US2014159254A1PendingUtilityA1

Dicing tape-integrated film for semiconductor back surface

Assignee: NITTO DENKO CORPPriority: Dec 24, 2009Filed: Feb 18, 2014Published: Jun 12, 2014
Est. expiryDec 24, 2029(~3.4 yrs left)· nominal 20-yr term from priority
H10W 74/15H10W 72/073H10W 72/07236H10W 72/072H10W 72/241H10W 72/016H10W 72/07202H10W 72/01331H10W 90/721H10W 72/252H10P 72/7438H10P 72/7402H10P 54/00H10W 74/144H10W 46/00H10W 42/121Y10T428/28Y10T428/1476H10W 72/013H10W 72/20H01L 21/6836H01L 21/78H01L 23/562
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Claims

Abstract

The present invention provides a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which a peel force (temperature: 23° C., peeling angle: 180°, tensile rate: 300 mm/min) between the pressure-sensitive adhesive layer of the dicing tape and the film for flip chip type semiconductor back surface is from 0.05 N/20 mm to 1.5 N/20 mm.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A dicing tape-integrated film for semiconductor back surface, comprising:
 a dicing tape comprising a base material and a pressure-sensitive adhesive layer provided on the base material; and   a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer,   wherein a peel force (temperature: 23° C., peeling angle: 180°, tensile rate: 300 mm/min) between the pressure-sensitive adhesive layer of the dicing tape and the film for flip chip type semiconductor back surface is from 0.05 N/20 mm to 1.5 N/20 mm, and   wherein the film for flip chip type semiconductor back surface has a ratio of weight decrease of 1% by weight or less after heating at a temperature of 250° C. for 1 hour.   
     
     
         2 . The dicing tape-integrated film for semiconductor back surface according to  claim 1 , wherein the film for flip chip type semiconductor back surface is colored. 
     
     
         3 . The dicing tape-integrated film for semiconductor back surface according to  claim 1 , wherein the film for flip chip type semiconductor back surface has a laser marking property. 
     
     
         4 . The dicing tape-integrated film for semiconductor back surface according to  claim 1 , which is used for a flip chip-mounted semiconductor device. 
     
     
         5 . A process for producing a semiconductor device, the process comprising:
 attaching a workpiece onto the film for flip chip type semiconductor back surface of the dicing tape-integrated film for semiconductor back surface according to  claim 1 ,   dicing the workpiece to form a chip-shaped workpiece,   peeling the chip-shaped workpiece from the pressure-sensitive adhesive layer of the dicing tape together with the film for flip chip type semiconductor back surface, and   fixing the chip-shaped workpiece to an adherend by flip chip bonding.   
     
     
         6 . A flip chip-mounted semiconductor device, which is manufactured using the dicing tape-integrated film for semiconductor back surface according to  claim 1 , the semiconductor device comprising a chip-shaped workpiece and the film for flip chip type semiconductor back surface attached to a back surface of the chip-shaped workpiece.

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