Bbul top side substrate layer enabling dual sided silicon interconnect and stacking flexibility
Abstract
An apparatus including a die including a first side and an opposite second side including a device side with contact points; and a build-up carrier including at least one layer of conductive material disposed on a first side of the die, and a plurality of alternating layers of conductive material and dielectric material disposed on the second side of the die, wherein the at least one layer of conductive material on the first side of the die is coupled to at least one of (1) at least one of the alternating layers of conductive material on the second side of the die and (2) at least one of the contact points of the die. A method including forming a first portion of a build-up carrier adjacent one side of a die, and forming a second portion of the build-up carrier adjacent another side of the die.
Claims
exact text as granted — not AI-modified1 . An apparatus comprising:
a die comprising a first side and an opposite second side comprising a device side with contact points; and a build-up carrier comprising:
at least one layer of conductive material disposed on a first side of the die, and
a plurality of alternating layers of conductive material and dielectric material disposed on the second side of the die, wherein the at least one layer of conductive material on the first side of the die is coupled to at least one of (1) at least one of the alternating layers of conductive material on the second side of the die and (2) at least one of the contact points of the die.
2 . The apparatus of claim 1 , wherein the at least one layer of conductive material on the first side of the die is separated from the die by a dielectric material.
3 . The apparatus of claim 1 , wherein the at least one layer of conductive material on the first side is electrically coupled to at least one of the plurality of layers of conductive material on the second side.
4 . The apparatus of claim 1 , wherein the contact points of the die are coupled to the at least one layer of conductive material.
5 . The apparatus of claim 4 , wherein the contacts of the die that are coupled to the at least one layer of conductive material are coupled to conductive vias from the second side of the die to the first side.
6 . A method comprising:
forming a first portion of a build-up carrier adjacent a die, the die comprising a first side and an opposite second side comprising a device side with contact points, the build-up carrier comprising a plurality of alternating layers of conductive material and dielectric material, wherein at least one of the layers of conductive material is coupled to one of the contact points of the die; and forming a second portion of the build-up carrier adjacent the first side of the die, the second portion comprising at least one layer of conductive material that is coupled to one of (1) at least one of the alternating layers of conductive material on the first portion of the carrier and (2) at least one of the contact points.
7 . The method of claim 6 , wherein, prior to forming a first portion of the build-up carrier, the method further comprises:
forming a sacrificial substrate having a planar surface; and positioning the die on the sacrificial substrate.
8 . The method of claim 6 , wherein forming the second portion of the build-up carrier comprises separating the at least one layer of conductive material on the first side of the die from the die by a dielectric material.
9 . The method of claim 6 , further comprising electrically coupling the at least one layer of conductive material on the first side comprises coupling to at least one of the plurality of layers of conductive material on the second side.
10 . The method of claim 6 , further comprising coupling the contact points of the die to the at least one layer of conductive material.
11 . The method of claim 10 , wherein the contacts of the die that are coupled to the at least one layer of conductive material are coupled to conductive vias from the second side of the die to the first side.
12 . An apparatus comprising:
a package comprising a microprocessor disposed in a carrier, the microprocessor comprising a first side and an opposite second side comprising a device side with contact points; the carrier comprising:
a first portion coupled to the second side of the microprocessor, the first portion comprising:
a plurality of alternating layers of conductive material and insulating material, wherein at least one of the layers of conductive material is coupled to one of the contact points of the microprocessor; and
a plurality of accessible contacts; and
a second portion adjacent the first side of the microprocessor, the second portion comprising at least one layer of conductive material; and
a printed circuit board coupled to at least a portion of the plurality of accessible contacts of the carrier.
13 . The apparatus of claim 12 , wherein the contact points of the microprocessor comprise a first plurality of contact points, the microprocessor further comprising a second plurality of contact points on a first side of the microprocessor, and second plurality of contact points are coupled to the at least one conductive layer of the second portion of the package.
14 . The apparatus of claim 12 , wherein the plurality of accessible contacts of the first portion of the carrier comprise a first plurality of accessible contacts, and the second portion of the carrier further comprises:
a second plurality of accessible contacts.
15 . The apparatus of claim 14 , further comprising:
a secondary device coupled to the second plurality of accessible contacts.
16 . The apparatus of claim 15 , wherein the secondary device comprises at least one memory device.
17 . The apparatus of claim 15 , wherein the secondary device comprises a package.
18 . The apparatus of claim 15 , wherein the secondary device comprises a logic device.Join the waitlist — get patent alerts
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