Semiconductor device and a method of manufacturing the same

Abstract

A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of wirings arranged within the regions of the electrode pads are, respectively, made uniform for every wiring layer. To this end, in a region where an occupation rate of wiring is smaller than those in other regions, a dummy wiring is provided. On the contrary, when the occupation rate of wiring is larger than in other regions, slits are formed in the wiring to control the wiring occupation rate. In the respective wirings layers, the shapes, sizes and intervals of wirings below the respective electrode pads are made similar or equal to one another.

1 - 40 . (canceled) 
     
     
         41 . A method of manufacturing a semiconductor device comprising the steps of:
 (a) forming active regions on a main surface of a semiconductor substrate;   (b) after step (a) forming a first insulating film over the main surface of the semiconductor substrate;   (c) forming a first conductive film over the first insulating film;   (d) forming wiring layers by patterning the first conductive film;   (e) after step (d) forming a second insulating film over the main surface of the semiconductor substrate;   (f) forming a second conductive film over the second insulating film;   (g) forming first and second pads by patterning the second conductive film, the second pad being a dummy pattern;   (h) after step (g) forming a third insulating film over the main surface of the semiconductor substrate, the third insulating film having a first opening over the first pad and a second opening over the second pad; and   (i) forming a first bump electrode over the third insulating film so as to be electrically connected to the first pad via the first opening and a second bump electrode over the third insulating film so as to be electrically connected to the second pad via the second opening.   
     
     
         42 . A method of manufacturing a semiconductor device according to  claim 41 ,
 wherein an internal circuit for driving a liquid crystal display is formed over the main surface of the semiconductor substrate.   
     
     
         43 . A method of manufacturing a semiconductor device according to  claim 42 ,
 wherein the second pad is not electrically connected to the internal circuit.   
     
     
         44 . A method of manufacturing a semiconductor device according to  claim 41 ,
 wherein each of the first and second insulating films is planarized by chemical mechanical polishing.