Method and apparatus for processing carbon nanotubes

Abstract

A method for processing carbon nanotubes includes positioning in a treatment chamber of a carbon nanotube processing apparatus a substrate having multiple carbon nanotubes bundled together and oriented substantially perpendicular to a surface of the substrate, and introducing a microwave into the treatment chamber from a planar antenna having multiple microwave radiation holes such that plasma of an etching gas is generated and that the plasma etches the carbon nanotubes starting from one end of the carbon nanotubes bundled together.

What is claimed is: 
     
         1 . A method for processing carbon nanotubes, comprising:
 positioning in a treatment chamber of a carbon nanotube processing apparatus a substrate having a plurality of carbon nanotubes bundled together and oriented substantially perpendicular to a surface of the substrate; and   introducing a microwave into the treatment chamber from a planar antenna having a plurality of microwave radiation holes such that plasma of an etching gas is generated and that the plasma etches the carbon nanotubes starting from one end of the carbon nanotubes bundled together.   
     
     
         2 . The method for processing carbon nanotubes according to  claim 1 , wherein the planar antenna is a radial line slot antenna. 
     
     
         3 . The method for processing carbon nanotubes according to  claim 1 , wherein the etching gas is an oxidizing gas. 
     
     
         4 . The method for processing carbon nanotubes according to  claim 3 , wherein the oxidizing gas is at least one gas selected from the group consisting of O 2  gas, O 3  gas, H 2 O gas, H 2 O 2  gas and NO gas. 
     
     
         5 . The method for processing carbon nanotubes according to  claim 3 , wherein the etching gas is a reducing gas. 
     
     
         6 . The method for processing carbon nanotubes according to  claim 5 , wherein the reducing gas is at least one gas selected from the group consisting of H 2  gas and NH 3  gas. 
     
     
         7 . The method for processing carbon nanotubes according to  claim 6 , further comprising adding an oxidizing gas in an amount in a range of 0.001 volume % to 3 volume % with respect to the reducing gas. 
     
     
         8 . The method for processing carbon nanotubes according to  claim 7 , wherein the oxidizing gas is at least one gas selected from the group consisting of O 2  gas, O 3  gas, H 2 O gas, H 2 O 2  gas and NO gas. 
     
     
         9 . The method for processing carbon nanotubes according to  claim 1 , wherein the introducing of the microwave comprises introducing a plasma generating gas together with the etching gas into the treatment chamber such that the plasma is generated. 
     
     
         10 . The method for processing carbon nanotubes according to  claim 1 , wherein the introducing of the microwave comprises maintaining a pressure in the treatment chamber in a range of 66.7 Pa to 400 Pa. 
     
     
         11 . The method for processing carbon nanotubes according to  claim 1 , wherein the introducing of the microwave comprises introducing the microwave having a power in a range of 500 W to 4000 W. 
     
     
         12 . The method for processing carbon nanotubes according to  claim 1 , wherein the carbon nanotube processing apparatus has a treatment chamber having an opening on top and configured such that the plurality of carbon nanotubes on the substrate is processed in the treatment chamber, a stage configured to hold the substrate in the treatment chamber, a dielectric plate configured to cover the opening of the treatment chamber, a planar antenna positioned on an outer-side of the dielectric plate and having a plurality of microwave radiation holes configured to introduce the microwave into the treatment chamber, a first gas inlet configured to introduce a processing gas into the treatment chamber, a second gas inlet configured to introduce a processing gas into the treatment chamber, and an exhaust duct connected to an exhaust device configured to decompress and evacuate the treatment chamber, the first gas inlet is positioned between the dielectric plate and the second gas inlet, the second gas inlet is positioned between the first gas inlet and the stage and has a plurality of gas discharge ports configured to discharge a gas to the carbon nanotubes on the surface of the substrate held on the stage, and at least one of the first gas inlet and the second gas inlet is configured to introduce the etching gas into the treatment chamber such that the plurality of carbon nanotubes is etched. 
     
     
         13 . The method for processing carbon nanotubes according to  claim 12 , wherein the introducing of the microwave comprising setting the dielectric plate and the stage such that a distance between a lower surface of the dielectric plate and an upper surface of the stage is in a range of 140 mm to 200 mm and setting the second gas inlet and the stage such that a distance between a lower end of the second gas inlet and the upper surface of the stage is 80 mm or more. 
     
     
         14 . An apparatus for processing carbon nanotubes, comprising:
 a treatment chamber having an opening on top and configured such that a plurality of carbon nanotubes bundled together on a substrate and oriented substantially perpendicular to a surface of the substrate is processed in the treatment chamber;   a stage configured to hold the substrate in the treatment chamber;   a dielectric plate configured to cover the opening of the treatment chamber;   a planar antenna positioned on an outer-side of the dielectric plate and having a plurality of microwave radiation holes configured to introduce a microwave into the treatment chamber;   a first gas inlet configured to introduce a processing gas into the treatment chamber;   a second gas inlet configured to introduce a processing gas into the treatment chamber; and   an exhaust duct connected to an exhaust device configured to decompress and evacuate the treatment chamber,   wherein the first gas inlet is positioned between the dielectric plate and the second gas inlet, the second gas inlet is positioned between the first gas inlet and the stage and has a plurality of gas discharge ports configured to discharge a gas to the carbon nanotubes on the surface of the substrate held on the stage, and at least one of the first gas inlet and the second gas inlet is configured to introduce an etching gas into the treatment chamber such that the plurality of carbon nanotubes is etched.   
     
     
         15 . The apparatus for processing carbon nanotubes according to  claim 14 , wherein the dielectric plate and the stage are positioned such that a distance between a lower surface of the dielectric plate and an upper surface of the stage is in a range of 140 mm to 200 mm, and the second gas inlet and the stage are positioned such that a distance between a lower end of the second gas inlet and the upper surface of the stage is 80 mm or more. 
     
     
         16 . The apparatus for processing carbon nanotubes according to  claim 14 , wherein the planar antenna is a radial line slot antenna. 
     
     
         17 . The apparatus for processing carbon nanotubes according to  claim 15 , wherein the planar antenna is a radial line slot antenna. 
     
     
         18 . The apparatus for processing carbon nanotubes according to  claim 14 , wherein the first gas inlet is configured to introduce a plasma generating gas together with the etching gas into the treatment chamber. 
     
     
         19 . The apparatus for processing carbon nanotubes according to  claim 14 , wherein the first gas inlet is configured to introduce a plasma generating gas and an inert gas together with the etching gas into the treatment chamber. 
     
     
         20 . The apparatus for processing carbon nanotubes according to  claim 14 , wherein the first gas inlet is configured to introduce a plasma generating gas and an inert gas together with the etching gas into the treatment chamber, and the second gas inlet is configured to introduce an inert gas together with the etching gas into the treatment chamber.