Exposure mask and method of manufacturing a substrate using the exposure mask

Abstract

An exposure mask includes a first transmission portion, a second transmission portion, and a blocking portion. The first transmission portion is configured to, when illuminated with light, transmit the light at a first energy level. The first transmission portion is disposed in association with formation of a first contact hole in an underlying layer. The second transmission portion is configured to, when illuminated with the light, transmit the light at a second energy level. The second transmission portion is disposed in association with formation of a second contact hole in the underlying layer. The blocking portion is configured to block the light, and is disposed in association with a boundary region between a first region and a second region of the underlying layer. The second transmission portion is further configured to enable the second contact hole to be formed deeper into the underlying layer than the first contact hole.

What is claimed is: 
     
         1 . An exposure mask, comprising:
 a first transmission portion configured to, when illuminated with light, transmit the light at a first energy level, the first transmission portion being disposed in association with formation of a first contact hole in an underlying layer;   a second transmission portion configured to, when illuminated with the light, transmit the light at a second energy level, the second transmission portion being disposed in association with formation of a second contact hole in the underlying layer; and   a blocking portion configured to block the light, the blocking portion being disposed in association with a boundary region between a first region of the underlying layer and a second region of the underlying layer,   wherein the second transmission portion is further configured to enable the second contact hole to be formed deeper into the underlying layer than the first contact hole.   
     
     
         2 . The exposure mask of  claim 1 , wherein the first transmission portion comprises a first length extending in a first direction, the second transmission portion comprises a second length extending in the first direction, and the second length is greater than the first length. 
     
     
         3 . The exposure mask of  claim 1 , wherein the first transmission portion comprises a first area and the second transmission portion comprises a second area, the second area being greater than the first area. 
     
     
         4 . The exposure mask of  claim 3 , wherein a first transmittance associated with the first transmission portion and a second transmittance associated with the second transmission portion are substantially the same as each other. 
     
     
         5 . The exposure mask of  claim 3 , wherein the first transmission portion comprises a first halftone film comprising a first transmittance. 
     
     
         6 . The exposure mask of  claim 5 , wherein the second transmission portion comprises a second halftone film comprising a second transmittance, the second transmittance being greater than the first transmittance. 
     
     
         7 . The exposure mask of  claim 3 , wherein each of the first transmission portion and the second transmission portion comprises at least one slit. 
     
     
         8 . The exposure mask of  claim 7 , wherein the second transmission portion comprises a greater number of slits than the first transmission portion. 
     
     
         9 . The exposure mask of  claim 1 , wherein the first transmission portion comprises a first halftone film comprising a first transmittance. 
     
     
         10 . The exposure mask of  claim 9 , wherein the second transmission portion comprises a second halftone film comprising a second transmittance, the second transmittance being greater than the first transmittance. 
     
     
         11 . The exposure mask of  claim 10 , wherein a first length extending in a first direction of the first transmission portion and a second length extending in the first direction of the second transmission portion are substantially the same as each other. 
     
     
         12 . The exposure mask of  claim 10 , wherein a first area of the first transmission portion and a second area of the second transmission portion are substantially the same as each other. 
     
     
         13 . The exposure mask of  claim 10 , wherein each of the first transmission portion and the second transmission portion comprises at least one slit. 
     
     
         14 . A method of manufacturing a substrate, the method comprising:
 forming a gate layer on a substrate comprising a first region and a second region;   forming a gate insulating layer on the gate layer;   forming a semiconductor layer on the gate insulating layer in the first region;   forming a source/drain layer on the semiconductor layer;   forming an organic insulating layer on the source/drain layer in the first region and on the gate insulating layer in the second region;   disposing, over the organic insulating layer, an exposure mask comprising a first transmission portion, a second transmission portion, and a blocking portion, the first transmission portion being disposed over the first region, the second transmission portion being disposed over the second region, and the blocking portion being disposed over a boundary region between the first region and the second region;   illuminating the organic insulating layer with light through the exposure mask to form a first contact hole exposing the source/drain layer in the first region and a second contact hole exposing the gate layer in the second region, the second contact hole being formed deeper than the first contact hole; and   forming a conductive material on the organic insulating layer, the conductive material connecting the source/drain layer and the gate layer via the first contact hole and the second contact hole,   wherein the first transmission portion is configured to, when illuminated with light, transmit the light at a first energy level, the second transmission portion is configured to, when illuminated with the light, transmit the light at a second energy level, and the blocking portion is configured to block the light.   
     
     
         15 . The method of  claim 14 , wherein the first transmission portion comprises a first length extending in a first direction and the second transmission portion comprises a second length extending in the first direction, the second length being greater than the first length. 
     
     
         16 . The method of  claim 14 , wherein the first transmission portion comprises a first area and the second transmission portion comprises a second area, the second area being greater than the first area. 
     
     
         17 . The method of  claim 14 , wherein the first transmission portion comprises a first halftone film comprising a first transmittance, and the second transmission portion comprises a second halftone mask comprising a second transmittance, the second transmittance being greater than the first transmittance. 
     
     
         18 . The method of  claim 17 , wherein a first area associated with the first transmission portion and a second area associated with the second transmission portion are substantially the same as each other. 
     
     
         19 . The method of  claim 14 , wherein the gate layer is a gate electrode of a thin-film transistor associated with a gate driving part disposed on the substrate, the gate driving part being configured to output a gate signal to a gate line, the source/drain electrode is a source electrode or a drain electrode of the thin-film transistor, and the conductive material is a bridge electrode configured to electrically connect the gate electrode and the source electrode or the drain electrode. 
     
     
         20 . The method of  claim 14 , wherein the gate layer is a gate pad, the source/drain electrode is a data pad, and the conductive material is a bridge electrode electrically connecting the gate pad and the data pad. 
     
     
         21 . The method of  claim 14 , wherein a terminating opening of the second contact hole at the gate layer is equal to or greater than a terminating opening of the first contact hole at the source/drain layer. 
     
     
         22 . The exposure mask of  claim 1 , wherein the second energy level is greater than the first energy level. 
     
     
         23 . The method of  claim 14 , wherein the second energy level is greater than the first energy level. 
     
     
         24 . A method, comprising:
 forming a layer on a substrate; and   illuminating, for a duration, the layer with light through a reticle at least configured to facilitate formation of a first via and a second via in the layer, the reticle comprising:
 a first transmission portion associated with the first via, the first transmission portion being configured to, when illuminated with the light, transmit the light at a first energy level, and 
 a second transmission portion associated with the second via, the second transmission portion being configured to, when illuminated with the light, transmit the light at a second energy level, 
   wherein illuminating the layer for the duration at the first and second energy levels causes, at least in part, the second via to be formed deeper into the layer than the first via.