Method of manufacturing light emitting diode and light emitting diode manufactured thereby

Abstract

There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.

1 .- 10 . (canceled) 
     
     
         11 . A method of manufacturing a light emitting diode, the method comprising:
 growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber;   transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber;   growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber;   growing an active layer on the additional first conductivity type nitride semiconductor layer; and   growing a second conductivity type nitride semiconductor layer on the active layer.   
     
     
         12 . The method of  claim 11 , wherein part of the undoped nitride semiconductor layer is exposed to the air during the transferring of the substrate to the second reaction chamber. 
     
     
         13 . The method of  claim 11 , wherein the growing of the active layer and the second conductivity type nitride semiconductor layer is performed in the second reaction chamber. 
     
     
         14 . The method of  claim 11 , wherein the growing of the active layer is performed in the second reaction chamber, and
 the growing of the second conductivity type nitride semiconductor layer includes:   transferring the substrate having the active layer grown thereon to a third reaction chamber; and   growing the second conductivity type nitride semiconductor layer on the active layer in the third reaction chamber.   
     
     
         15 . The method of  claim 11 , wherein the growing of the active layer includes:
 transferring the substrate having the additional first conductivity type nitride semiconductor layer grown thereon to a third reaction chamber; and   growing the active layer on the additional first conductivity type nitride semiconductor layer in the third reaction chamber.   
     
     
         16 . The method of  claim 15 , wherein the growing of the second conductivity type nitride semiconductor layer includes:
 transferring the substrate having the active layer grown thereon to a fourth reaction chamber; and   growing the second conductivity type nitride semiconductor layer on the active layer in the fourth reaction chamber.   
     
     
         17 . The method of  claim 11 , wherein the first conductivity type nitride semiconductor layer and the additional first conductivity type nitride semiconductor layer are formed of the same material. 
     
     
         18 . The method of  claim 11 , wherein the first conductivity type nitride semiconductor layer and the additional first conductivity type nitride semiconductor layer are formed of n-type GaN, and the undoped nitride semiconductor layer is formed of undoped GaN. 
     
     
         19 . A light emitting diode comprising:
 first and second conductivity type nitride semiconductor layers;   an active layer interposed between the first and second conductivity type nitride semiconductor layers; and   an undoped nitride semiconductor layer interposed within the first conductivity type nitride semiconductor layer to divide the first conductivity type nitride semiconductor layer into two regions in a thickness direction.   
     
     
         20 . The light emitting diode of  claim 19 , wherein the first conductivity type nitride semiconductor layer is formed of n-type GaN, and the undoped nitride semiconductor layer is formed of undoped GaN.