Eruption control in thermally stable pcd products

Abstract

A method of making a polycrystalline diamond cutting element includes placing a body of polycrystalline diamond including a matrix phase of bonded together diamond grains and a plurality of empty interstitial spaces between the bonded together diamond grains adjacent a first substrate material to form an assembly and subjecting the assembly to high pressure/high temperature conditions that include an initial pressure ramping, a pressure hold, and a second pressure ramping.

What is claimed: 
     
         1 . A method of making a polycrystalline diamond cutting element, comprising:
 placing a body of polycrystalline diamond comprising a matrix phase of bonded together diamond grains and a plurality of empty interstitial spaces between the bonded together diamond grains adjacent a first substrate material to form an assembly; and   subjecting the assembly to high pressure/high temperature conditions that include an initial pressure ramping, a pressure hold, and a second pressure ramping.   
     
     
         2 . The method of  claim 1 , further comprising:
 placing a plurality of diamond particles adjacent a second substrate material comprising a catalyst material;   subjecting the plurality of diamond particles and the second substrate material to second high temperature/high pressure conditions to form a polycrystalline diamond body comprising a matrix phase of bonded together diamond grains and a plurality of interstitial spaces between the bonded together diamond grains occupied by the catalyst material bonded to the second substrate material;   removing the second substrate material from the polycrystalline diamond body; and   removing substantially all of the catalyst material from the interstitial spaces of the polycrystalline diamond body.   
     
     
         3 . The method of  claim 1 , wherein the high pressure/high temperature conditions include an initial temperature ramping, a temperature hold, and a second temperature ramping. 
     
     
         4 . The method of  claim 1 , wherein the high pressure/high temperature conditions include a monotonic increase in temperature through the initial pressure ramping, the pressure hold, and the second pressure ramping. 
     
     
         5 . The method of  claim 1 , wherein the high pressure/high temperature conditions include an initial temperature ramping during the initial pressure ramping and a temperature hold through the pressure hold and second pressure ramping. 
     
     
         6 . The method of  claim 1 , wherein the high pressure/high temperature conditions further include a second pressure hold following the second pressure ramping. 
     
     
         7 . The method of  claim 6 , wherein the second pressure hold is longer than the first pressure hold. 
     
     
         8 . The method of  claim 1 , wherein the first pressure ramping is at a greater ramp rate than the second pressure ramping. 
     
     
         9 . The method of  claim 1 , wherein the first pressure ranges from about 50 to 70 kbar. 
     
     
         10 . The method of  claim 1 , wherein the second pressure ranges from 70 to 82 kbar. 
     
     
         11 . The method of  claim 1 , wherein the first substrate material comprises a plurality of carbide particles bonded together by a infiltrant material. 
     
     
         12 . The method of  claim 11 , wherein during the subjecting step, the infiltrant material infiltrates into at least some of the empty interstitial spaces. 
     
     
         13 . The method of  claim 12 , further comprising: removing at least a portion of the infiltrant materials from the interstitial spaces. 
     
     
         14 . A method of forming a polycrystalline ultra-hard material, comprising:
 placing a volume of ultra-hard material adjacent to a substrate material comprising a Group VIII-containing material to form an assembly;   subjecting the assembly to a first high pressure/high temperature condition sufficient to cause the Group VIII-containing material to melt and partially infiltrate the volume of ultra-hard material; and   subjecting the combination to a second high pressure/high temperature condition sufficient to cause the Group VIII-containing material to further infiltrate the volume of ultra-hard material,   the pressure of the second high pressure/high temperature condition is higher than that of the first high pressure/high temperature condition.   
     
     
         15 . The method of  claim 14 , wherein the volume of ultra-hard material comprises a body of polycrystalline diamond comprising a matrix phase of bonded together diamond grains and a plurality of empty interstitial spaces between the bonded together diamond grains. 
     
     
         16 . The method of  claim 14 , wherein the first high pressure/high temperature condition has a temperature maximum that is substantially the same as the second high pressure/high temperature condition. 
     
     
         17 . The method of  claim 14 , further comprising: holding the first high pressure/high temperature condition for a period of time prior to ramping to the second high pressure/high temperature condition. 
     
     
         18 . The method of  claim 14 , wherein the volume of ultra-hard material comprises a mass of diamond particles. 
     
     
         19 . The method of  claim 14 , further comprising:
 placing a plurality of ultra-hard particles adjacent a second substrate material comprising a catalyst material;   subjecting the plurality of ultra-hard particles and the second substrate material to second high temperature/high pressure conditions to form the ultrahard material comprising a matrix phase of bonded together ultra-hard particle grains and a plurality of interstitial spaces between the bonded together ultra-hard particle grains occupied by the catalyst material bonded to the second substrate material;   removing the second substrate material from the polycrystalline diamond body; and   removing substantially all of the catalyst material from the interstitial spaces of the ultra-hard material.   
     
     
         20 . A polycrystalline diamond compact, comprising:
 a polycrystalline diamond body comprising a matrix phase of bonded together diamond grains and a plurality of interstitial spaces between the bonded together diamond grains, the polycrystalline diamond body being substantially free of eruptions; and   a substrate attached to the polycrystalline diamond body at an interface,   the polycrystalline diamond body comprising at least two regions, a first region adjacent the interface and a second region opposite the interface, the first region of the polycrystalline diamond body comprising an infiltrant material disposed within the interstitial spaces and being substantially free of a catalyst material used to form the polycrystalline diamond body, and the interstitial spaces in the second region of the polycrystalline diamond body being substantially free of the infiltrant material and the catalyst material used to form the polycrystalline diamond body.   
     
     
         21 . A cutting tool, comprising: at least one polycrystalline diamond compact of  claim 20  disposed thereon.