Method for manufacturing light emitting diode chip

Abstract

A method for manufacturing a light emitting diode chip includes following steps: providing a sapphire substrate, the sapphire substrate having a plurality of protrusions on an upper surface thereof; forming an un-doped GaN layer on the upper surface of the sapphire substrate, the un-doped GaN layer totally covering the protrusions; forming a plurality of semiconductor islands on an upper surface of the un-doped GaN layer by self-organized growth, gaps being formed between two adjacent semiconductor islands to expose a part of the upper surface of the un-doped GaN layer; forming an n-type GaN layer on the exposed part of the upper surface of the un-doped GaN layer, the n-type GaN layer being laterally grown to totally cover the semiconductor islands; forming an active layer on an upper surface of the n-type GaN layer; and forming a p-type GaN layer on the active layer.

What is claimed is: 
     
         1 . A method for manufacturing a light emitting diode chip, comprising:
 providing a sapphire substrate, the sapphire substrate having a plurality of protrusions on an upper surface thereof;   forming an un-doped GaN layer on the upper surface of the sapphire substrate, the un-doped GaN layer totally covering the protrusions;   forming a plurality of semiconductor islands on an upper surface of the un-doped GaN layer by self-organized growth, gaps being formed between two adjacent semiconductor islands to expose a part of the upper surface of the un-doped GaN layer;   forming an n-type GaN layer on the exposed part of the upper surface of the un-doped GaN layer, the n-type GaN layer being laterally grown to totally cover the semiconductor islands;   forming an active layer on an upper surface of the n-type GaN layer; and   forming a p-type GaN layer on the active layer.   
     
     
         2 . The method of  claim 1 , wherein the semiconductor islands formed by self-organized growth are made of SiN x . 
     
     
         3 . The method of  claim 2 , wherein in the self-organized growth of the semiconductor islands, SiH 4  gas and NH 3  gas are introduced to the surface of the un-doped GaN layer, and the SiH 4  gas reacts with the NH 3  gas to form the semiconductor islands made of SiN x . 
     
     
         4 . The method of  claim 1 , wherein the semiconductor islands formed by self-organized growth are made of MgN x . 
     
     
         5 . The method of  claim 4 , wherein in the self-organized growth of the semiconductor islands, Cp 2 Mg gas and NH 3  gas are introduced to the surface of the un-doped GaN layer, and the Cp 2 Mg gas reacts with the NH 3  gas to form the semiconductor islands made of MgN x . 
     
     
         6 . The method of  claim 1 , wherein the semiconductor islands each have a height in a range from 50 nm to 300 nm. 
     
     
         7 . The method of  claim 6 , wherein the semiconductor islands each have a height about 100 nm. 
     
     
         8 . The method of  claim 1 , wherein the semiconductor islands each have a width less than 50 nm. 
     
     
         9 . The method of  claim 8 , wherein the semiconductor islands each have a width about 10 nm. 
     
     
         10 . The method of  claim 1 , wherein the active layer is a multiple quantum well (MQW) layer. 
     
     
         11 . A method for manufacturing a light emitting diode chip, comprising:
 providing a sapphire substrate, the sapphire substrate having a plurality of protrusions on an upper surface thereof;   forming an un-doped GaN layer on the upper surface of the sapphire substrate, the un-doped GaN layer totally covering the protrusions;   forming a plurality of semiconductor islands on an upper surface of the un-doped GaN layer by self-organized growth, gaps being formed between two adjacent semiconductor islands to expose a part of the upper surface of the un-doped GaN layer;   forming an n-type GaN layer on the exposed part of the upper surface of the un-doped GaN layer, the n-type GaN layer filled in the gaps between two adjacent semiconductor islands and totally covering the semiconductor islands;   forming an active layer on an upper surface of the n-type GaN layer; and   forming a p-type GaN layer on the active layer.   
     
     
         12 . The method of  claim 11 , wherein the semiconductor islands formed by self-organized growth are made of SiN x . 
     
     
         13 . The method of  claim 12 , wherein in the self-organized growth of the semiconductor islands, SiH 4  gas and NH 3  gas are introduced to the surface of the un-doped GaN layer, and the SiH 4  gas reacts with the NH 3  gas to form the semiconductor islands made of SiN x . 
     
     
         14 . The method of  claim 11 , wherein the semiconductor islands formed by self-organized growth are made of MgN x . 
     
     
         15 . The method of  claim 14 , wherein in the self-organized growth of the semiconductor islands, Cp 2 Mg gas and NH 3  gas are introduced to the surface of the un-doped GaN layer, and the Cp 2 Mg gas reacts with the NH 3  gas to form the semiconductor islands made of MgN x . 
     
     
         16 . The method of  claim 11 , wherein the semiconductor islands each have a height in a range from 50 nm to 300 nm. 
     
     
         17 . The method of  claim 16 , wherein the semiconductor islands each have a height about 100 nm. 
     
     
         18 . The method of  claim 11 , wherein the semiconductor islands each have a width less than 50 nm. 
     
     
         19 . The method of  claim 18 , wherein the semiconductor islands each have a width about 10 nm. 
     
     
         20 . The method of  claim 11 , wherein the active layer is a multiple quantum well (MQW) layer.