US2014138814A1PendingUtilityA1

Method for Producing an Integrated Circuit Pointed Element, and Corresponding Integrated Circuit

Assignee: ST MICROELECTRONICS ROUSSETPriority: Nov 16, 2012Filed: Oct 9, 2013Published: May 22, 2014
Est. expiryNov 16, 2032(~6.3 yrs left)· nominal 20-yr term from priority
B81B 2201/0235B81B 2203/0361B81B 2201/0242B81B 2201/018B81C 1/00111G01P 2015/0874G01P 15/0802G01P 2015/0877G01P 2015/0862G01P 2015/0871B81B 3/001G01P 15/135H10D 1/714H10D 1/043H10D 1/711H01L 21/4814H01L 23/4822
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Claims

Abstract

A method for producing an integrated circuit pointed element is disclosed. An element has a projection with a concave part directing its concavity towards the element. The element includes a first etchable material. A zone is formed around the concave part of the element. The zone includes a second material that is less rapidly etchable than the first material for a particular etchant. The first material and the second material are etched with the particular etchant to form an open crater in the concave part and thus to form a pointed region of the element.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method for producing an integrated circuit pointed element, the method comprising:
 forming an element having a projection with a concave part directing its concavity towards the element, the element comprising a first etchable material;   forming a zone around the concave part of the element, the zone comprising a second material that is less rapidly etchable than the first material for a particular etchant; and   etching the first material and the second material with the particular etchant to form an open crater in the concave part and thus to form a pointed region of the element.   
     
     
         2 . The method according to  claim 1 , wherein forming the zone comprises forming a layer of the second material above and around the at least one concave part and removing a portion of the layer of the second material so as to abrade a crown of the concave part. 
     
     
         3 . The method according to  claim 2 , wherein forming the crater comprises simultaneously etching the first material and the second material. 
     
     
         4 . The method according to  claim 3 , further comprising removing the second material after the etching of the first material and of the second material. 
     
     
         5 . The method according to  claim 1 , wherein the element and the projection comprise the same first material. 
     
     
         6 . The method according to  claim 5 , wherein forming the element comprises forming a support comprising a block and performing a compliant deposition of a layer of the first material on the support, part of the layer overlapping the block forming the projection. 
     
     
         7 . The method according to  claim 1 , wherein forming the element comprises forming an element having a plurality of projections, wherein the first material and of the second material are etched so as to form an open crater in each concave part and thus to form several pointed regions. 
     
     
         8 . The method according to  claim 7 , wherein forming the element comprises forming a support comprising a plurality of blocks and performing a compliant deposition of a layer of the first material over the support, part of the layer overlapping the blocks forming the projections. 
     
     
         9 . A device, comprising an element of an integrated circuit having at least one projection, the element comprising a pointed region in an upper part and a base in a lower part, the pointed region limiting an open crater and broadening out from a pointed end towards the base. 
     
     
         10 . The device according to  claim 9 , wherein an external wall of the pointed region exhibits a concave profile extending from the opening of the crater and directing its concavity towards the crater. 
     
     
         11 . The device according to  claim 9 , wherein the crater exhibits a hollowed part at a foot of an internal wall of the pointed region. 
     
     
         12 . The device according to  claim 9 , further comprising a support possessing a block, wherein the element is located above the support. 
     
     
         13 . The device according to  claim 12 , wherein the pointed region is auto-aligned with the block. 
     
     
         14 . The device according to  claim 9 , wherein the projection and a remainder of the element comprise one and the same first material. 
     
     
         15 . The device according to  claim 9 , wherein the element comprises a plurality of projections, each projection having a pointed region. 
     
     
         16 . An integrated circuit, comprising:
 a support; and   an element having a projection disposed over the support, the element comprising a pointed region in an upper part and a base in a lower part, the pointed region limiting an open crater and broadening out from a pointed end towards the base.   
     
     
         17 . The integrated circuit according to  claim 16 , wherein the integrated circuit comprises a capacitor that includes two electrodes separated by a dielectric layer, at least one of the electrodes being formed with the element. 
     
     
         18 . The integrated circuit according to  claim 16 , wherein the integrated circuit comprises an interconnection part comprising several metallization levels separated by an isolating region, the element being metallic and situated on one of the metallization levels. 
     
     
         19 . The integrated circuit according to  claim 18 , further comprising a mechanical system for electrical switching within the interconnection part, the mechanical system including the element. 
     
     
         20 . The integrated circuit according to  claim 19 , the mechanical system comprising a first deformable assembly in a housing, the first deformable assembly including a beam held in at least two different places by at least two arms secured to edges of the housing, the beam and the arms being metallic and situated within one and the same metallization level, the mechanical system further including an electrically conducting body. 
     
     
         21 . The integrated circuit according to  claim 20 , wherein the first deformable assembly has a first configuration when it has a first temperature and a second configuration when at least one of the arms has a second temperature different from the first temperature. 
     
     
         22 . The integrated circuit according to  claim 21 , wherein the beam is remote from the body in the first configuration and in contact with the body and immobilized by the body in the second configuration so as to be able to establish or prohibit an electrical link passing through the body and through the beam, wherein the first deformable assembly is activatable to pass from one of the configurations to another. 
     
     
         23 . The integrated circuit according to  claim 22 , wherein the mechanical system further comprises a release mechanism configured to release a beam immobilized by the body and comprising the element, the pointed region being directed towards the body. 
     
     
         24 . The integrated circuit according to  claim 23 , wherein the mechanical system further comprises a generator configured to generate an electrostatic field at a level of the pointed region. 
     
     
         25 . The integrated circuit according to  claim 18 , further comprising a mechanical system for detecting spatial orientation and/or change of orientation of the integrated circuit, the mechanical system disposed within the interconnection part and comprising the element and a housing whose walls comprise metallic portions produced within various metallization levels. 
     
     
         26 . The integrated circuit according to  claim 25 , wherein the housing comprises a floor wall and a ceiling wall and wherein the mechanical system includes a metallic piece housed in the housing and mobile inside the housing, a check mechanism with the housing providing an evolution zone for the metallic piece and comprising at least two electrically conducting elements disposed at a boundary of the evolution zone. 
     
     
         27 . The integrated circuit according to  claim 26 , wherein the floor or ceiling walls incorporate the element and direct the pointed region towards the metallic piece inside the evolution zone, the piece being configured so as, under the action of gravity, to come into contact with the electrically conducting elements in response to a given spatial orientation of the integrated circuit. 
     
     
         28 . The integrated circuit according to  claim 27 , further comprising a detector configured to detect an electrical link passing through the piece and the electrically conducting elements.

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