US2014134495A1PendingUtilityA1
Silicon-carbonaceous encapsulated materials
Est. expiryAug 25, 2031(~5.1 yrs left)· nominal 20-yr term from priority
C01P 2004/03B01J 13/02C01P 2004/80C01P 2002/85C01B 33/113C01B 33/18C01P 2002/72H01M 4/485H01M 4/583H01M 10/052C01P 2006/12H01M 4/0402H01M 4/1393H01M 4/366H01M 4/1397Y02E60/10
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Claims
Abstract
A process includes preparing a solution including a silicon precursor or mixture of silicon precursors and a monomer or mixture of monomers; polymerizing the monomer to form a polymer-silicon precursor matrix; and pyrolyzing the polymer-silicon precursor matrix to form an electrochemically active carbon-coated silicon material.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A process comprising:
contacting a silicon compound with a carbon source gas at a temperature sufficient to degrade the carbon source gas to carbon and deposit the carbon on the surface of the silicon compound to form SiO 2 C or SiO x C, wherein x is less than 2 and greater than zero; wherein:
the silicon compound is silicon, a silicon suboxide, a silicon oxycarbide, or a mixture of any two or more such materials.
2 . The process of claim 1 , wherein the silicon compound is SiO 2 produced by the Stöber method.
3 . The process of claim 1 , wherein the temperature is from about 400° C. to about 1600° C.
4 . The process of claim 1 , wherein the carbon source gas comprises a C 1 -C 12 alkane, a C 1 -C 12 alkene, a C 1 -C 12 alkyne, or a mixture of any two or more such gases.
5 . The process of claim 1 , wherein the carbon source gas comprises methane, ethane, n-propane, n-butane, 2-methylpropane, n-pentane, 2-methylbutane, 2,2-dimethylpropane, hexane, ethylene, propylene, 1-butene, cis-2-butene, trans-2-butene, 2-methylpropene, 1,3-butadiene, 1-pentene, 2-pentene, 3-pentene, 2-methyl-l-butene, 2-methyl-2-butene, 3-methyl-l-butene, hexene, acetylene, acetylene, 1-butyne, 2-butyne, 1-pentyne, 2-pentyne, 3-methyl-1-pentyne, hexyne, or toluene.
6 . An anode material comprising the electrochemically active carbon-coated silicon material produced according to claim 1 .
7 . An anode material comprising the SiO 2 C or SiO x C produced according to claim 1 .
8 . An electrochemical device comprising the anode material of claim 6 .
9 . An electrochemical device comprising the anode material of claim 7 .Join the waitlist — get patent alerts
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