US2014134351A1PendingUtilityA1

Method to deposit cvd ruthenium

51
Assignee: APPLIED MATERIALS INCPriority: Nov 9, 2012Filed: Aug 15, 2013Published: May 15, 2014
Est. expiryNov 9, 2032(~6.3 yrs left)· nominal 20-yr term from priority
Inventors:Tae Hong HaSang Ho YuKiejin Park
H10P 14/43H10W 20/0425H10W 20/043H10W 20/032C23C 16/46C23C 16/18C23C 16/0281C23C 16/16C23C 16/505C23C 28/322C23C 16/513C23C 28/34
51
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

Methods for depositing ruthenium by a PECVD process are described herein. Methods for depositing ruthenium can include positioning a substrate in a processing chamber, the substrate having a barrier layer formed thereon, heating and maintaining the substrate at a first temperature, flowing a first deposition gas into a processing chamber, the first deposition gas comprising a ruthenium containing precursor, generating a plasma from the first deposition gas to deposit a first ruthenium layer over the barrier layer, flowing a second deposition gas into the processing chamber to deposit a second ruthenium layer over the first ruthenium layer, the second deposition gas comprising a ruthenium containing precursor, depositing a copper seed layer over the second ruthenium layer and annealing the substrate at a second temperature.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method for depositing ruthenium, comprising:
 positioning a substrate in a processing chamber, the substrate having a barrier layer formed thereon;   heating and maintaining the substrate at a first temperature;   flowing a first deposition gas into a processing chamber, the first deposition gas comprising a ruthenium containing precursor;   generating a plasma from the first deposition gas to deposit a first ruthenium layer over the barrier layer;   flowing a second deposition gas into the processing chamber to deposit a second ruthenium layer over the first ruthenium layer, the second deposition gas comprising a ruthenium containing precursor;   depositing a copper seed layer over the second ruthenium layer; and   annealing the substrate at a second temperature.   
     
     
         2 . The method of  claim 1 , wherein the ruthenium containing precursor is an organic compound. 
     
     
         3 . The method of  claim 1 , wherein the ruthenium containing precursor is selected from the group consisting of Ru(C 5 H 5 ) 2  (bis(cyclopentadienyl) ruthenium), Ru 3 (CO) 12  (dodecacarbonyl triruthenium) or combinations thereof. 
     
     
         4 . The method of  claim 1 , wherein the first temperature is between 150° C. and 350° C. 
     
     
         5 . The method of  claim 1 , wherein the first deposition gas and the second deposition gas have the same composition. 
     
     
         6 . The method of  claim 1 , wherein the first ruthenium layer is from 3 Å to 7 Å thick. 
     
     
         7 . The method of  claim 1 , wherein the second ruthenium layer is from 10 Å to 45 Å thick. 
     
     
         8 . The method of  claim 1 , wherein the plasma is generated from an RF source with a power between 50 W and 1000 W. 
     
     
         9 . The method of  claim 1 , wherein the barrier layer comprises tantalum (Ta) and tantalum nitride (TaN). 
     
     
         10 . The method of  claim 1 , wherein the barrier layer has one or more copper features formed underneath. 
     
     
         11 . The method of  claim 1 , wherein the first deposition gas further comprises H 2 , NH 3 , Ar, N 2 , He or combinations thereof. 
     
     
         12 . A method for depositing ruthenium, comprising:
 positioning a substrate in a processing chamber;   forming a barrier layer on the surface of the substrate;   heating and maintaining the substrate at a first temperature;   flowing a deposition gas into a processing chamber, the deposition gas comprising a ruthenium-containing precursor;   generating a plasma from the deposition gas to deposit a ruthenium layer over the barrier layer;   depositing a copper seed layer over the ruthenium layer; and   annealing the substrate at a second temperature.   
     
     
         13 . The method of  claim 12 , wherein the ruthenium containing precursor is selected from the group consisting of Ru(C 5 H 5 ) 2  (bis(cyclopentadienyl) ruthenium), Ru 3 (CO) 12  (dodecacarbonyl triruthenium) or combinations thereof. 
     
     
         14 . The method of  claim 12 , wherein the first temperature is between 150° C. and 350° C. 
     
     
         15 . The method of  claim 12 , wherein the deposition gas further comprises H 2 , NH 3 , Ar, N 2 , He or combinations thereof. 
     
     
         16 . The method of  claim 12 , wherein the ruthenium layer is from 3 Å to 7 Å thick. 
     
     
         17 . The method of  claim 12 , wherein the ruthenium layer is from 13 Å to 52 Å thick. 
     
     
         18 . The method of  claim 12 , wherein the plasma is generated from an RF source with a power between 50 W and 1000 W. 
     
     
         19 . The method of  claim 12 , wherein the barrier layer comprises tantalum (Ta) and tantalum nitride (TaN). 
     
     
         20 . The method of  claim 12 , wherein the barrier layer has one or more copper features formed underneath.

Join the waitlist — get patent alerts

Track US2014134351A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.