Graphene Formation on Dielectrics and Electronic Devices Formed Therefrom

Abstract

Methods of forming a graphene-based device are provided. According to an embodiment, a graphene-based device can be formed by subjecting a substrate having a dielectric formed thereon to a chemical vapor deposition (CVD) process using a cracked hydrocarbon or a physical vapor deposition (PVD) process using a graphite source; and performing an annealing process. The annealing process can be performed to temperatures of 1000 K or more. The cracked hydrocarbon of the CVD process can be cracked ethylene. In accordance with one embodiment, the application of the cracked ethylene to a MgO(111) surface followed by an annealing under ultra high vacuum conditions can result in a structure on the MgO(111) surface of an ordered graphene film with an oxidized carbon-containing interfacial layer therebetween. In another embodiment, the PVD process can be used to form single or multiple monolayers of graphene.

1 - 14 . (canceled) 
     
     
         15 . A graphene-based device fabricated according to the method comprising:
 depositing carbon on a surface of a substrate comprising a dielectric; and   performing an annealing process with respect to the substrate having the carbon deposited thereon to form ordered graphene from the carbon deposited on the dielectric.   
     
     
         16 . The device of  claim 15 , wherein the dielectric is a high-k oxide. 
     
     
         17 . The device of  claim 15 , wherein the dielectric is MgO. 
     
     
         18 . The device of  claim 17 , wherein the dielectric is MgO(111). 
     
     
         19 . The device of  claim 15 , wherein the substrate comprises silicon. 
     
     
         20 . The device of  claim 15 , wherein the dielectric comprises at least one of the group consisting of Al.sub.2O.sub.3, perovskites, alkali earth oxides, and NiO.